Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM 2Al 10 (M=Ru, Os and Fe) by means of bulk-sensitive hard X-ray photoelectron spectroscopy
The occupancy of the 4fn contributions in the Kondo semiconductors CeM2Al10 (M=Ru, Os and Fe) has been quantitatively determined by means of bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES) on the Ce 3d core levels. Combining a configuration interaction scheme with full multiplet calcul...
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| Main Authors: | , |
|---|---|
| Format: | Article (Journal) |
| Language: | English |
| Published: |
28 January 2015
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| In: |
Journal of electron spectroscopy and related phenomena
Year: 2015, Volume: 199, Pages: 56-63 |
| ISSN: | 0368-2048 |
| DOI: | 10.1016/j.elspec.2015.01.004 |
| Online Access: | Verlag, Volltext: http://dx.doi.org/10.1016/j.elspec.2015.01.004 Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S036820481500016X 
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| Author Notes: | F. Strigari, M. Sundermann, Y. Muro, K. Yutani, T. Takabatake, K.-D. Tsuei, Y.F. Liao, A. Tanaka, P. Thalmeier, M.W. Haverkort, L.H. Tjeng, A. Severing |
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Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard x-ray photoelectron...
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