Inequivalent routes across the mott transition in V 2O 3 explored by X-ray absorption

The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping, and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre-K edge. Contrary to what has been taken for granted so far, the metallic phase reached un...

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Hauptverfasser: Rodolakis, Fanny (VerfasserIn) , Haverkort, Maurits W. (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 25 January 2010
In: Physical review letters
Year: 2010, Jahrgang: 104, Heft: 4, Pages: 047401
ISSN:1079-7114
DOI:10.1103/PhysRevLett.104.047401
Online-Zugang:Verlag, Volltext: http://dx.doi.org/10.1103/PhysRevLett.104.047401
Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevLett.104.047401
Volltext
Verfasserangaben:F. Rodolakis, P. Hansmann, J.-P. Rueff, A. Toschi, M.W. Haverkort, G. Sangiovanni, A. Tanaka, T. Saha-Dasgupta, O.K. Andersen, K. Held, M. Sikora, I. Alliot, J.-P. Itié, F. Baudelet, P. Wzietek, P. Metcalf, and M. Marsi

MARC

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520 |a The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping, and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre-K edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing doping or temperature. Using a novel computational scheme, we relate this effect to the role and occupancy of the a1g orbitals. This finding unveils the inequivalence of different routes across the Mott transition in V2O3. 
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