Orbital-assisted metal-insulator transition in VO 2

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results s...

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1. Verfasser: Haverkort, Maurits W. (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 2 November 2005
In: Physical review letters
Year: 2005, Jahrgang: 95, Heft: 19, Pages: 196404
ISSN:1079-7114
DOI:10.1103/PhysRevLett.95.196404
Online-Zugang:Verlag, Volltext: http://dx.doi.org/10.1103/PhysRevLett.95.196404
Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevLett.95.196404
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Verfasserangaben:M.W. Haverkort, Z. Hu, A. Tanaka, W. Reichelt, S.V. Streltsov, M.A. Korotin, V.I. Anisimov, H.H. Hsieh, H.-J. Lin, C. . Chen, D.I. Khomskii, and L.H. Tjeng

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520 |a We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime. 
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