Quantitative study of valence and configuration interaction parameters of the Kondo semiconductors CeM2Al10 (M = Ru, Os and Fe) by means of bulk-sensitive hard x-ray photoelectron spectroscopy
The occupancy of the 4f^n contributions in the Kondo semiconductors CeM2Al10(M = Ru, Os and Fe) has been quantitatively determined by means of bulk-sensitive hard x-ray photoelectron spectroscopy (HAXPES) on the Ce 3d core levels. Combining a configuration interaction scheme with full multiplet calc...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Dokumenttyp: | Article (Journal) Kapitel/Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2015
|
| In: |
Arxiv
|
| Online-Zugang: | Verlag, kostenfrei, Volltext: http://arxiv.org/abs/1409.6552
|
| Verfasserangaben: | F. Strigari, M. Sundermann, Y. Muro, K. Yutani, T. Takabatake, K.-D. Tsuei, Y.F. Liao, A. Tanaka, P. Thalmeier, M.W. Haverkort, L.H. Tjeng, A. Severing |
Search Result 1