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Growth and properties of strained VOx thin films with controlled stoichiometry

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We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using 18O2-RBS and the vanadium valence using XAS. The upper and lower stoichiometry limits found are similar to the ones known for bulk material (0.8&l...

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Main Authors: Rata, Diana (Author) , Haverkort, Maurits W. (Author)
Format: Article (Journal) Chapter/Article
Language:English
Published: 2003
In: Arxiv

Online Access:Verlag, kostenfrei, Volltext: http://arxiv.org/abs/cond-mat/0301263
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Author Notes:A.D. Rata, A.R. Chezan, and T. Hibma, Chemical Physics, Materials Science Centre, Rijksuniversiteit Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands and Nuclear Solid State Physics, Materials Science Centre, Rijksuniversiteit Groningen, Nijenborgh 4, Groningen 9747 AG, The Netherlands; M.W. Haverkort, and L.H. Tjeng, II. Physikalisches Insitut, Universität zu Köln, Zülpicher Str. 77, 50937 Köln, Germany; H.H. Hsieh, H.-J. Lin and C.T. Chen, Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan
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Growth and properties of strained VO x thin films with controlled stoichiometry by Rata, Diana (Author) , Haverkort, Maurits W. (Author) ,


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