Extended space charge region and unoccupied molecular band formation in epitaxial tetrafluorotetracyanoquinodimethane films
Generating well-defined molecular structures at inorganic/organic interfaces and within molecular films is fundamental for charge carrier transport and thus the performance of organic molecule-based (opto)electronic devices. Here we show by means of low-energy electron diffraction that tetrafluorote...
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| Main Authors: | , , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
July 5, 2017
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| In: |
The journal of physical chemistry. C, Energy, materials, and catalysis
Year: 2017, Volume: 121, Issue: 29, Pages: 15696-15701 |
| ISSN: | 1932-7455 |
| DOI: | 10.1021/acs.jpcc.7b02939 |
| Online Access: | Verlag, Volltext: http://dx.doi.org/10.1021/acs.jpcc.7b02939 Verlag, Volltext: https://doi.org/10.1021/acs.jpcc.7b02939 
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| Author Notes: | David Gerbert, Friedrich Maaß, and Petra Tegeder |
| Summary: | Generating well-defined molecular structures at inorganic/organic interfaces and within molecular films is fundamental for charge carrier transport and thus the performance of organic molecule-based (opto)electronic devices. Here we show by means of low-energy electron diffraction that tetrafluorotetracyanoquinodimethane (F4TCNQ) grows in an epitaxial fashion on the Au(111) surface, resulting in a unit cell which consists of one molecule. In this well-ordered crystalline films we found the formation of an extended space charge region and a dispersing unoccupied electronic molecular state using energy- and angle-resolved two-photon photoemission. The latter finding is a clear proof for band formation in the crystalline molecular structure. We suggest that the high electron affinity of F4TCNQ and a bandlike electron transport are responsible for the formation of the space charge region. Using F4TCNQ as a hole injection layer may open the opportunity to manipulate the hole injection barrier in a controlled way via variation of the F4TCNQ layer thickness. |
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| Item Description: | Gesehen am 04.05.2018 |
| Physical Description: | Online Resource |
| ISSN: | 1932-7455 |
| DOI: | 10.1021/acs.jpcc.7b02939 |