4f crystal field ground state of the strongly correlated topological insulator SmB6

We investigated the crystal-electric field ground state of the 4f manifold in the strongly correlated topological insulator SmB6 using core-level nonresonant inelastic x-ray scattering. The directional dependence of the scattering function that arises from higher multipole transitions establishes un...

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Hauptverfasser: Sundermann, Martin (VerfasserIn) , Haverkort, Maurits W. (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 5 January 2018
In: Physical review letters
Year: 2018, Jahrgang: 120, Heft: 1, Pages: 016402
ISSN:1079-7114
DOI:10.1103/PhysRevLett.120.016402
Online-Zugang:Verlag, Volltext: http://dx.doi.org/10.1103/PhysRevLett.120.016402
Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevLett.120.016402
Volltext
Verfasserangaben:M. Sundermann, H. Yavaş, K. Chen, D.J. Kim, Z. Fisk, D. Kasinathan, M.W. Haverkort, P. Thalmeier, A. Severing, and L.H. Tjeng
Beschreibung
Zusammenfassung:We investigated the crystal-electric field ground state of the 4f manifold in the strongly correlated topological insulator SmB6 using core-level nonresonant inelastic x-ray scattering. The directional dependence of the scattering function that arises from higher multipole transitions establishes unambiguously that the Γ8 quartet state of the Sm f5 J=5/2 configuration governs the ground-state symmetry and, hence, the topological properties of SmB6. Our findings contradict the results of density functional calculations reported so far.
Beschreibung:Im Titel ist die Ziffer "6" tiefgestellt
Gesehen am 30.05.2018
Beschreibung:Online Resource
ISSN:1079-7114
DOI:10.1103/PhysRevLett.120.016402