Chemisorption on semiconductors: the role of quantum corrections on the space charge regions in multiple dimensions
The chemisorption of O2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparis...
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| Hauptverfasser: | , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
03 May 2012
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| In: |
Applied physics letters
Year: 2012, Jahrgang: 100, Heft: 18, Pages: 1-5 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.4709483 |
| Online-Zugang: | Verlag, Volltext: http://dx.doi.org/10.1063/1.4709483 Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.4709483 
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| Verfasserangaben: | Francesco Ciucci, Carlo de Falco, Marcelo I. Guzman, Sara Lee, and Tomonori Honda |
| Zusammenfassung: | The chemisorption of O2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case. |
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| Beschreibung: | Gesehen am 03.08.2018 |
| Beschreibung: | Online Resource |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.4709483 |