Chemisorption on semiconductors: the role of quantum corrections on the space charge regions in multiple dimensions
The chemisorption of O2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparis...
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| Main Authors: | , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
03 May 2012
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| In: |
Applied physics letters
Year: 2012, Volume: 100, Issue: 18, Pages: 1-5 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.4709483 |
| Online Access: | Verlag, Volltext: http://dx.doi.org/10.1063/1.4709483 Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.4709483 
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| Author Notes: | Francesco Ciucci, Carlo de Falco, Marcelo I. Guzman, Sara Lee, and Tomonori Honda |
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| 520 | |a The chemisorption of O2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case. | ||
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