Cover Image

Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles

We investigate the mechanism of resistive switching in non-volatile memory devices based on an ITO/ZnO nanoparticles/Al structure using electroabsorption (EA) spectroscopy and X-ray photoelectron spectroscopy (XPS). By incorporating a small amount of low-bandgap organic semiconductor, poly(9,9-dioct...

Full description

Saved in:
Bibliographic Details
Main Authors: Li, Cheng (Author) , Vaynzof, Yana (Author)
Format: Article (Journal)
Language:English
Published: 11 April 2017
In: Journal of applied physics
Year: 2017, Volume: 121, Issue: 14
ISSN:1089-7550
DOI:10.1063/1.4979973
Online Access:Verlag, Volltext: http://dx.doi.org/10.1063/1.4979973
Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.4979973
Get full text
Author Notes:Cheng Li, Yana Vaynzof, Girish Lakhwani, Gareth J. Beirne, Jianpu Wang, and Neil C. Greenham

MARC

LEADER 00000caa a2200000 c 4500
001 1580913458
003 DE-627
005 20220815010219.0
007 cr uuu---uuuuu
008 180912s2017 xx |||||o 00| ||eng c
024 7 |a 10.1063/1.4979973  |2 doi 
035 |a (DE-627)1580913458 
035 |a (DE-576)510913458 
035 |a (DE-599)BSZ510913458 
035 |a (OCoLC)1341018547 
040 |a DE-627  |b ger  |c DE-627  |e rda 
041 |a eng 
084 |a 29  |2 sdnb 
100 1 |a Li, Cheng  |e VerfasserIn  |0 (DE-588)1166810259  |0 (DE-627)1030677905  |0 (DE-576)510913229  |4 aut 
245 1 0 |a Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles  |c Cheng Li, Yana Vaynzof, Girish Lakhwani, Gareth J. Beirne, Jianpu Wang, and Neil C. Greenham 
264 1 |c 11 April 2017 
300 |a 6 
336 |a Text  |b txt  |2 rdacontent 
337 |a Computermedien  |b c  |2 rdamedia 
338 |a Online-Ressource  |b cr  |2 rdacarrier 
500 |a Gesehen am 12.09.2018 
520 |a We investigate the mechanism of resistive switching in non-volatile memory devices based on an ITO/ZnO nanoparticles/Al structure using electroabsorption (EA) spectroscopy and X-ray photoelectron spectroscopy (XPS). By incorporating a small amount of low-bandgap organic semiconductor, poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT), as a probe molecule for EA characterization, we study the change in the built-in potential during the switching process under different ambient conditions. We compare the concentrations of oxygen vacancies between the Al/ZnO interface and the bulk of the ZnO nanoparticle film by XPS. We also investigate the effect of an external electrical field on the concentration of oxygen vacancies at the Al/ZnO interface. We find that the resistive switching can be attributed to the migration of oxygen vacancies driven by the electrical field, accompanied by adsorption/desorption of oxygen molecules at the Al/ZnO interface. This process gives rise to the formation of a dipole layer, which modulates the injection barrier, and is responsible for switching the resistance state of the memory device. 
700 1 |a Vaynzof, Yana  |e VerfasserIn  |0 (DE-588)1155259335  |0 (DE-627)1016574932  |0 (DE-576)501498508  |4 aut 
773 0 8 |i Enthalten in  |t Journal of applied physics  |d Melville, NY : American Inst. of Physics, 1937  |g 121(2017,14) Artikel-Nummer 144503, 6 Seiten  |h Online-Ressource  |w (DE-627)270127267  |w (DE-600)1476463-5  |w (DE-576)078188954  |x 1089-7550  |7 nnas  |a Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles 
773 1 8 |g volume:121  |g year:2017  |g number:14  |g extent:6  |a Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles 
856 4 0 |u http://dx.doi.org/10.1063/1.4979973  |x Verlag  |x Resolving-System  |3 Volltext 
856 4 0 |u https://aip.scitation.org/doi/10.1063/1.4979973  |x Verlag  |3 Volltext 
951 |a AR 
992 |a 20180912 
993 |a Article 
994 |a 2017 
998 |g 1155259335  |a Vaynzof, Yana  |m 1155259335:Vaynzof, Yana  |d 700000  |d 724000  |d 160000  |d 160200  |e 700000PV1155259335  |e 724000PV1155259335  |e 160000PV1155259335  |e 160200PV1155259335  |k 0/700000/  |k 1/700000/724000/  |k 0/160000/  |k 1/160000/160200/  |p 2 
999 |a KXP-PPN1580913458  |e 3025370203 
BIB |a Y 
SER |a journal 
JSO |a {"relHost":[{"title":[{"subtitle":"AIP's archival journal for significant new results in applied physics","title":"Journal of applied physics","title_sort":"Journal of applied physics"}],"part":{"year":"2017","issue":"14","text":"121(2017,14) Artikel-Nummer 144503, 6 Seiten","volume":"121","extent":"6"},"titleAlt":[{"title":"Journal of applied physics online"}],"pubHistory":["Volume 8, issue 1 (January 1937)-"],"recId":"270127267","corporate":[{"role":"isb","roleDisplay":"Herausgebendes Organ","display":"American Institute of Physics"}],"language":["eng"],"disp":"Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticlesJournal of applied physics","type":{"bibl":"periodical","media":"Online-Ressource"},"note":["Gesehen am 08.07.25"],"id":{"issn":["1089-7550"],"eki":["270127267"],"zdb":["1476463-5"]},"origin":[{"publisherPlace":"Melville, NY","publisher":"American Inst. of Physics","dateIssuedKey":"1937","dateIssuedDisp":"1937-"}],"name":{"displayForm":["publ. by the American Institute of Physics"]},"physDesc":[{"extent":"Online-Ressource"}]}],"physDesc":[{"extent":"6 S."}],"id":{"eki":["1580913458"],"doi":["10.1063/1.4979973"]},"origin":[{"dateIssuedDisp":"11 April 2017","dateIssuedKey":"2017"}],"name":{"displayForm":["Cheng Li, Yana Vaynzof, Girish Lakhwani, Gareth J. Beirne, Jianpu Wang, and Neil C. Greenham"]},"language":["eng"],"recId":"1580913458","note":["Gesehen am 12.09.2018"],"type":{"media":"Online-Ressource","bibl":"article-journal"},"title":[{"title":"Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles","title_sort":"Observation of oxygen vacancy migration in memory devices based on ZnO nanoparticles"}],"person":[{"given":"Cheng","family":"Li","role":"aut","display":"Li, Cheng","roleDisplay":"VerfasserIn"},{"role":"aut","display":"Vaynzof, Yana","roleDisplay":"VerfasserIn","given":"Yana","family":"Vaynzof"}]} 
SRT |a LICHENGVAYOBSERVATIO1120 

Similar Items