Surface-enhanced infrared absorption with Si-doped InAsSb/GaSb nano-antennas

We demonstrate surface enhanced infrared absorption spectroscopy using 1-dimensional highly doped semiconductors based on Si-doped InAsSb plasmonic nano-antennas. Engineering the plasmonic array to support the localized surface plasmon resonance aligned with the molecular vibrational absorption mode...

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Bibliographic Details
Main Authors: Milla, María José (Author) , Neubrech, Frank (Author)
Format: Article (Journal)
Language:English
Published: 18 Oct 2017
In: Optics express
Year: 2017, Volume: 25, Issue: 22, Pages: 26651-26661
ISSN:1094-4087
DOI:10.1364/OE.25.026651
Online Access:Verlag, Volltext: http://dx.doi.org/10.1364/OE.25.026651
Verlag, Volltext: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-25-22-26651
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Author Notes:M.J. Milla, F. Barho, F. González-Posada, L. Cerutti, B. Charlot, M. Bomers, F. Neubrech, E. Tournie, and T. Taliercio

MARC

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520 |a We demonstrate surface enhanced infrared absorption spectroscopy using 1-dimensional highly doped semiconductors based on Si-doped InAsSb plasmonic nano-antennas. Engineering the plasmonic array to support the localized surface plasmon resonance aligned with the molecular vibrational absorption mode of interest involves finely setting the doping level and nano-antenna width. Heavily doped nano-antennas require a wider size compared to lightly doped resonators. Increasing the doping level, and consequently the width of the nano-antenna, enhances the vibrational absorption of a ~15 nm thick organic layer up to 2 orders of magnitude compared to the unstructured sample and therefore improves sensing. These results pave the way towards molecule fingerprint sensor manufacturing by tailoring the plasmonic resonators to get a maximum surface enhanced infrared absorption at the target vibrational mode. 
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650 4 |a Physical vapor deposition 
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