A high-voltage pixel sensor for the ATLAS upgrade

High Voltage CMOS (HVCMOS) pixel sensors have been proposed for upgrade of the ATLAS experiment and for the tracking detectors at future colliders. They are implemented in commercial HVCMOS technologies, which makes the production cost effective when compared to hybrid pixel detectors. The HVCMOS de...

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Autori principali: Peric, Ivan (Autore) , Augustin, Heiko (Autore)
Natura: Article (Journal)
Lingua:inglese
Pubblicazione: 2019
In: Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
Year: 2018, Volume: 924, Pages: 99-103
ISSN:1872-9576
DOI:10.1016/j.nima.2018.06.060
Accesso online:Verlag, Volltext: https://doi.org/10.1016/j.nima.2018.06.060
Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S0168900218307903
Testo
Note sull'autore:Ivan Perić, Mridula Prathapan, Heiko Augustin, Mathieu Benoit, Raimon Casanova Mohr, Dominik Dannheim, Felix Ehrler, Fadoua Guezzi Messaoud, Moritz Kiehn, Andreas Nürnberg, Rudolf Schimassek, Mateus Vicente Barreto, Eva Vilella Figueras, Alena Weber, Winnie Wong, Hui Zhang
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Riassunto:High Voltage CMOS (HVCMOS) pixel sensors have been proposed for upgrade of the ATLAS experiment and for the tracking detectors at future colliders. They are implemented in commercial HVCMOS technologies, which makes the production cost effective when compared to hybrid pixel detectors. The HVCMOS detectors are monolithic, which means that the readout electronics and the sensor part are implemented on the same substrate. A high voltage is used to create a depletion region where the particle detection occurs. A large area prototype for the ATLAS experiment named ”ATLASpix” has been designed and fabricated in the AMS 180nm HVCMOS process technology. ATLASpix includes different design flavors in terms of pixel size and readout logic. HVCMOS pixel sensors have been fabricated using wafers of different resistivity. Design details and measurement results are presented.
Descrizione del documento:Available online 23 June 2018
Gesehen am 09.04.2019
Descrizione fisica:Online Resource
ISSN:1872-9576
DOI:10.1016/j.nima.2018.06.060