Electroluminescence generation in PbS quantum dot light-emitting field-effect transistors with solid-state gating
The application of light-emitting field-effect transistors (LEFET) is an elegant way of combining electrical switching and light emission in a single device architecture instead of two. This allows for a higher degree of miniaturization and integration in future optoelectronic applications. Here, we...
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| Hauptverfasser: | , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
December 12, 2018
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| In: |
ACS nano
Year: 2018, Jahrgang: 12, Heft: 12, Pages: 12805-12813 |
| ISSN: | 1936-086X |
| DOI: | 10.1021/acsnano.8b07938 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1021/acsnano.8b07938
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| Verfasserangaben: | Artem G. Shulga, Simon Kahmann, Dmitry N. Dirin, Arko Graf, Jana Zaumseil, Maksym V. Kovalenko, and Maria A. Loi |
MARC
| LEADER | 00000caa a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 1677281278 | ||
| 003 | DE-627 | ||
| 005 | 20230427002137.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 190918s2018 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1021/acsnano.8b07938 |2 doi | |
| 035 | |a (DE-627)1677281278 | ||
| 035 | |a (DE-599)KXP1677281278 | ||
| 035 | |a (OCoLC)1341244189 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 084 | |a 30 |2 sdnb | ||
| 100 | 1 | |a Shulga, Artem |e VerfasserIn |0 (DE-588)1195091702 |0 (DE-627)1677282452 |4 aut | |
| 245 | 1 | 0 | |a Electroluminescence generation in PbS quantum dot light-emitting field-effect transistors with solid-state gating |c Artem G. Shulga, Simon Kahmann, Dmitry N. Dirin, Arko Graf, Jana Zaumseil, Maksym V. Kovalenko, and Maria A. Loi |
| 264 | 1 | |c December 12, 2018 | |
| 300 | |a 9 | ||
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Gesehen am 18.09.2019 | ||
| 520 | |a The application of light-emitting field-effect transistors (LEFET) is an elegant way of combining electrical switching and light emission in a single device architecture instead of two. This allows for a higher degree of miniaturization and integration in future optoelectronic applications. Here, we report on a LEFET based on lead sulfide quantum dots processed from solution. Our device shows state-of-the-art electronic behavior and emits near-infrared photons with a quantum yield exceeding 1% when cooled. We furthermore show how LEFETs can be used to simultaneously characterize the optical and electrical material properties on the same device and use this benefit to investigate the charge transport through the quantum dot film. | ||
| 700 | 1 | |a Graf, Arko |e VerfasserIn |0 (DE-588)1137237600 |0 (DE-627)89423644X |0 (DE-576)49118736X |4 aut | |
| 700 | 1 | |a Zaumseil, Jana |e VerfasserIn |0 (DE-588)1137235659 |0 (DE-627)894232657 |0 (DE-576)491184247 |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |a American Chemical Society |t ACS nano |d Washington, DC : Soc., 2007 |g 12(2018), 12, Seite 12805-12813 |h Online-Ressource |w (DE-627)539881392 |w (DE-600)2383064-5 |w (DE-576)276561139 |x 1936-086X |7 nnas |
| 773 | 1 | 8 | |g volume:12 |g year:2018 |g number:12 |g pages:12805-12813 |g extent:9 |a Electroluminescence generation in PbS quantum dot light-emitting field-effect transistors with solid-state gating |
| 856 | 4 | 0 | |u https://doi.org/10.1021/acsnano.8b07938 |x Verlag |x Resolving-System |3 Volltext |
| 951 | |a AR | ||
| 992 | |a 20190918 | ||
| 993 | |a Article | ||
| 994 | |a 2018 | ||
| 998 | |g 1137235659 |a Zaumseil, Jana |m 1137235659:Zaumseil, Jana |d 120000 |d 120300 |e 120000PZ1137235659 |e 120300PZ1137235659 |k 0/120000/ |k 1/120000/120300/ |p 5 | ||
| 998 | |g 1137237600 |a Graf, Arko |m 1137237600:Graf, Arko |d 120000 |d 120300 |e 120000PG1137237600 |e 120300PG1137237600 |k 0/120000/ |k 1/120000/120300/ |p 4 | ||
| 999 | |a KXP-PPN1677281278 |e 3516539887 | ||
| BIB | |a Y | ||
| SER | |a journal | ||
| JSO | |a {"name":{"displayForm":["Artem G. Shulga, Simon Kahmann, Dmitry N. Dirin, Arko Graf, Jana Zaumseil, Maksym V. Kovalenko, and Maria A. Loi"]},"recId":"1677281278","note":["Gesehen am 18.09.2019"],"language":["eng"],"origin":[{"dateIssuedDisp":"December 12, 2018","dateIssuedKey":"2018"}],"person":[{"role":"aut","given":"Artem","family":"Shulga","display":"Shulga, Artem"},{"given":"Arko","role":"aut","display":"Graf, Arko","family":"Graf"},{"given":"Jana","role":"aut","display":"Zaumseil, Jana","family":"Zaumseil"}],"id":{"eki":["1677281278"],"doi":["10.1021/acsnano.8b07938"]},"type":{"media":"Online-Ressource","bibl":"article-journal"},"physDesc":[{"extent":"9 S."}],"relHost":[{"corporate":[{"display":"American Chemical Society","role":"aut"}],"physDesc":[{"extent":"Online-Ressource"}],"title":[{"title":"ACS nano","title_sort":"ACS nano"}],"type":{"bibl":"periodical","media":"Online-Ressource"},"id":{"eki":["539881392"],"issn":["1936-086X"],"zdb":["2383064-5"]},"part":{"extent":"9","text":"12(2018), 12, Seite 12805-12813","volume":"12","year":"2018","pages":"12805-12813","issue":"12"},"disp":"American Chemical SocietyACS nano","titleAlt":[{"title":"Nano"}],"name":{"displayForm":["American Chemical Society"]},"pubHistory":["1.2007,Aug. -"],"origin":[{"publisherPlace":"Washington, DC","publisher":"Soc.","dateIssuedDisp":"2007-","dateIssuedKey":"2007"}],"recId":"539881392","language":["eng"]}],"title":[{"title":"Electroluminescence generation in PbS quantum dot light-emitting field-effect transistors with solid-state gating","title_sort":"Electroluminescence generation in PbS quantum dot light-emitting field-effect transistors with solid-state gating"}]} | ||
| SRT | |a SHULGAARTEELECTROLUM1220 | ||