Pristine Poly(para-phenylene): relating semiconducting behavior to kinetics of precursor conversion

We investigated unsubstituted poly(para-phenylene) (PPP), a long-desired prototype of a conjugated polymer semiconductor. PPP was accessed via thermal aromatization of a precursor polymer bearing kinked, solubility-inducing dimethoxycyclohexadienylene moieties. IR spectroscopy and Vis ellipsometry s...

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Hauptverfasser: Strunk, Karl-Philipp (VerfasserIn) , Abdulkarim, Ali (VerfasserIn) , Freudenberg, Jan (VerfasserIn) , Pucci, Annemarie (VerfasserIn) , Bunz, Uwe H. F. (VerfasserIn) , Melzer, Christian (VerfasserIn) , Müllen, Klaus (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: May 3, 2019
In: ACS applied materials & interfaces
Year: 2019, Jahrgang: 11, Heft: 21, Pages: 19481-19488
ISSN:1944-8252
DOI:10.1021/acsami.9b03291
Online-Zugang:Verlag, Volltext: https://doi.org/10.1021/acsami.9b03291
Volltext
Verfasserangaben:Karl-Philipp Strunk, Ali Abdulkarim, Sebastian Beck, Tomasz Marszalek, Jakob Bernhardt, Silke Koser, Wojciech Pisula, Daniel Jänsch, Jan Freudenberg, Annemarie Pucci, Uwe H. F. Bunz, Christian Melzer, and Klaus Müllen
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Zusammenfassung:We investigated unsubstituted poly(para-phenylene) (PPP), a long-desired prototype of a conjugated polymer semiconductor. PPP was accessed via thermal aromatization of a precursor polymer bearing kinked, solubility-inducing dimethoxycyclohexadienylene moieties. IR spectroscopy and Vis ellipsometry studies revealed that the rate of conversion of the precursor to PPP increases with temperature and decreases with film density, indicating a process with high activation volume. The obtained PPP films were analyzed in thin-film transistors to gain insights into the interplay between the degree of conversion and the resulting p-type semiconducting properties. The semiconducting behavior of PPP was further unambiguously proven through IR and transistor measurements of molybdenum trioxide p-doped films.
Beschreibung:Gesehen am 10.10.2019
Beschreibung:Online Resource
ISSN:1944-8252
DOI:10.1021/acsami.9b03291