Correcting for contact geometry in Seebeck coefficient measurements of thin film devices
Driven by promising recent results, there has been a revived interest in the thermoelectric properties of organic (semi)conductors. Concomitantly, there is a need to probe the Seebeck coefficient S of modestly conducting materials in thin film geometry. Here we show that geometries that seem desirab...
Gespeichert in:
| Hauptverfasser: | , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
5 July 2014
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| In: |
Organic electronics
Year: 2014, Jahrgang: 15, Heft: 10, Pages: 2250-2255 |
| DOI: | 10.1016/j.orgel.2014.06.018 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1016/j.orgel.2014.06.018 Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S1566119914002456 
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| Verfasserangaben: | Stephan van Reenen, Martijn Kemerink |
MARC
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| 520 | |a Driven by promising recent results, there has been a revived interest in the thermoelectric properties of organic (semi)conductors. Concomitantly, there is a need to probe the Seebeck coefficient S of modestly conducting materials in thin film geometry. Here we show that geometries that seem desirable from a signal-to-noise perspective may induce systematic errors in the measured value of S, Sm, by a factor 3 or more. The enhancement of Sm by the device geometry is related to competing conduction paths outside the region between the electrodes. We derive a universal scaling curve that allows correcting for this and show that structuring the semiconductor is not needed for the optimal electrode configuration, being a set of narrow, parallel strips. | ||
| 650 | 4 | |a Device physics | |
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