Interface instabilities in polymer light emitting diodes due to annealing
In polymer light emitting diodes (PLEDS) with an (ITO/PPV/Ca) structure we observed a significant reduction of both the current and the light output at constant voltage after heat treatment for only 30 min at 65 °C. Electroluminescence spectroscopy experiments showed that the shape as well as the am...
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| Hauptverfasser: | , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
23 July 2003
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| In: |
Organic electronics
Year: 2003, Jahrgang: 4, Heft: 4, Pages: 209-218 |
| DOI: | 10.1016/S1566-1199(03)00017-X |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1016/S1566-1199(03)00017-X Verlag, Volltext: http://www.sciencedirect.com/science/article/pii/S156611990300017X |
| Verfasserangaben: | F.J.J. Janssen, J.M. Sturm, A.W. Denier van der Gon, L.J. van IJzendoorn, M. Kemerink, H.F.M. Schoo, M.J.A. de Voigt, H.H. Brongersma |
| Zusammenfassung: | In polymer light emitting diodes (PLEDS) with an (ITO/PPV/Ca) structure we observed a significant reduction of both the current and the light output at constant voltage after heat treatment for only 30 min at 65 °C. Electroluminescence spectroscopy experiments showed that the shape as well as the amplitude of the spectra were changed. The reduction of current and light output was investigated by measuring I-V and E-V (current-voltage and brightness-voltage) characteristics of PLEDs, I-V characteristics of single carrier devices, and by performing low energy ion scattering and X-ray photoelectron spectroscopy experiments on the Ca/PPV interface. It was concluded that the current and light output reduction could be ascribed to the degradation of the Ca/PPV and the ITO/PPV interfaces. The degradation of the ITO/PPV interface resulted in a reduction of the zero field hole mobility and a small increase of the field dependence of the mobility. The degradation of the Ca/PPV interface, probably by diffusion of calcium into the PPV, resulted in carrier traps and quenching sites, which influenced the field dependent electron mobility. |
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| Beschreibung: | Gesehen am 04.12.2019 |
| Beschreibung: | Online Resource |
| DOI: | 10.1016/S1566-1199(03)00017-X |