Charge transport in amorphous InGaZnO thin-film transistors
Gespeichert in:
| Hauptverfasser: | , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
26 October 2012
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| In: |
Physical review. B, Condensed matter and materials physics
Year: 2012, Jahrgang: 86, Heft: 15 |
| ISSN: | 1550-235X |
| DOI: | 10.1103/PhysRevB.86.155319 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1103/PhysRevB.86.155319 Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevB.86.155319 
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| Verfasserangaben: | W. Chr. Germs, W.H. Adriaans, A.K. Tripathi, W.S.C. Roelofs, B. Cobb, R.A.J. Janssen, G.H. Gelinck, and M. Kemerink |
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