Temperature-dependent built-in potential in organic semiconductor devices
The temperature dependence of the built-in voltage of organic semiconductor devices is studied. The results are interpreted using a simple analytical model for the band bending at the electrodes. It is based on the notion that, even at zero current, diffusion may cause a significant charge density i...
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| Hauptverfasser: | , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
12 May 2006
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| In: |
Applied physics letters
Year: 2006, Jahrgang: 88, Heft: 19 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.2205007 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1063/1.2205007 Verlag, Volltext: https://aip.scitation.org/doi/full/10.1063/1.2205007 
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| Verfasserangaben: | M. Kemerink, J.M. Kramer, H.H.P. Gommans, R.A.J. Janssen |
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| 520 | |a The temperature dependence of the built-in voltage of organic semiconductor devices is studied. The results are interpreted using a simple analytical model for the band bending at the electrodes. It is based on the notion that, even at zero current, diffusion may cause a significant charge density in the entire device, and hence a temperature dependent band bending. Both magnitude and temperature dependence of the built-in potential of various devices are consistently described by the model, as the effects of a thin LiF layer between cathode and active layer. | ||
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