On the width of the recombination zone in ambipolar organic field effect transistors
The performance of organic light emitting field effect transistors is strongly influenced by the width of the recombination zone. We present an analytical model for the recombination profile. By assuming Langevin recombination, the recombination zone width WW<math display="inline" overf...
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| Hauptverfasser: | , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
23 July 2008
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| In: |
Applied physics letters
Year: 2008, Jahrgang: 93, Heft: 3 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.2963488 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1063/1.2963488 Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.2963488 
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| Verfasserangaben: | M. Kemerink, D.S.H. Charrier, E.C.P. Smits, S.G.J. Mathijssen, D.M. de Leeuw, and R.A.J. Janssen |
| Zusammenfassung: | The performance of organic light emitting field effect transistors is strongly influenced by the width of the recombination zone. We present an analytical model for the recombination profile. By assuming Langevin recombination, the recombination zone width WW<math display="inline" overflow="scroll" altimg="eq-00001.gif"><mi>W</mi></math> is found to be given byW=4.34dδ⎯⎯⎯⎯⎯⎯⎯⎯⎯⎯⎯√W=4.34dδ<math display="inline" overflow="scroll" altimg="eq-00002.gif"><mrow><mi>W</mi><mo>=</mo><msqrt><mrow><mn>4.34</mn><mi>d</mi><mi>δ</mi></mrow></msqrt></mrow></math>, with dd<math display="inline" overflow="scroll" altimg="eq-00003.gif"><mi>d</mi></math> and δδ<math display="inline" overflow="scroll" altimg="eq-00004.gif"><mi>δ</mi></math> the gate dielectric and accumulation layer thicknesses, respectively. The model compares favorably to both numerical calculations and measured surface potential profiles of an actual ambipolar device. |
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| Beschreibung: | Gesehen am 11.12.2019 |
| Beschreibung: | Online Resource |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.2963488 |