Fast ambipolar integrated circuits with poly(diketopyrrolopyrrole- terthiophene)
Ambipolar integrated circuits were prepared with poly(diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02 cm2/V s0.02 cm2/V s<math display="inline" overflow="scroll" altimg="eq-00001.gif"><mrow><mn>0.02<...
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| Hauptverfasser: | , , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
17 May 2011
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| In: |
Applied physics letters
Year: 2011, Jahrgang: 98, Heft: 20 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.3589986 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1063/1.3589986 Verlag, Volltext: https://aip.scitation.org/doi/10.1063/1.3589986 
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| Verfasserangaben: | W.S.C. Roelofs, S.G.J. Mathijssen, J.C. Bijleveld, D. Raiteri, T.C.T. Geuns, M. Kemerink, E. Cantatore, R.A.J. Janssen, and D.M. de Leeuw |
| Zusammenfassung: | Ambipolar integrated circuits were prepared with poly(diketopyrrolopyrrole-terthiophene) as the semiconductor. The field-effect mobility of around 0.02 cm2/V s0.02 cm2/V s<math display="inline" overflow="scroll" altimg="eq-00001.gif"><mrow><mn>0.02</mn><mtext> </mtext><msup><mrow><mtext>cm</mtext></mrow><mn>2</mn></msup><mo>/</mo><mtext>V</mtext><mtext> </mtext><mtext>s</mtext></mrow></math> for both electrons and holes allowed for fabrication of functional integrated complementary metal-oxide semiconductor (CMOS)-like inverters and ring oscillators. The oscillation frequency was found to have a near quadratic dependence on the supply bias. The maximum oscillation frequency was determined to be 42 kHz, which makes this ring oscillator the fastest CMOS-like organic circuit reported to date. |
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| Beschreibung: | Gesehen am 12.12.2019 |
| Beschreibung: | Online Resource |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/1.3589986 |