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Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors

A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charg...

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Bibliographic Details
Main Authors: Roelofs, W. S. Christian (Author) , Spijkman, Mark-Jan (Author) , Mathijssen, Simon G. J. (Author) , Janssen, René A. J. (Author) , Leeuw, Dago M. de (Author) , Kemerink, Martijn (Author)
Format: Article (Journal)
Language:English
Published: 25 March 2014
In: Advanced materials
Year: 2014, Volume: 26, Issue: 26, Pages: 4450-4455
ISSN:1521-4095
DOI:10.1002/adma.201305215
Online Access:Verlag, Volltext: https://doi.org/10.1002/adma.201305215
Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201305215
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Author Notes:W.S. Christian Roelofs, Mark-Jan Spijkman, Simon G.J. Mathijssen, René A.J. Janssen, Dago M. de Leeuw, and Martijn Kemerink
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Summary:A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.
Item Description:Gesehen am 12.12.2019
Physical Description:Online Resource
ISSN:1521-4095
DOI:10.1002/adma.201305215

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