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Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors

A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charg...

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Hauptverfasser: Roelofs, W. S. Christian (VerfasserIn) , Spijkman, Mark-Jan (VerfasserIn) , Mathijssen, Simon G. J. (VerfasserIn) , Janssen, René A. J. (VerfasserIn) , Leeuw, Dago M. de (VerfasserIn) , Kemerink, Martijn (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 25 March 2014
In: Advanced materials
Year: 2014, Jahrgang: 26, Heft: 26, Pages: 4450-4455
ISSN:1521-4095
DOI:10.1002/adma.201305215
Online-Zugang:Verlag, Volltext: https://doi.org/10.1002/adma.201305215
Verlag, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.201305215
Volltext
Verfasserangaben:W.S. Christian Roelofs, Mark-Jan Spijkman, Simon G.J. Mathijssen, René A.J. Janssen, Dago M. de Leeuw, and Martijn Kemerink
Beschreibung
Zusammenfassung:A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.
Beschreibung:Gesehen am 12.12.2019
Beschreibung:Online Resource
ISSN:1521-4095
DOI:10.1002/adma.201305215

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