Optical properties of a tip-induced quantum dot
. We have performed optical spectroscopy measurements on a STM-tip-induced quantum dot in a GaAs layer. The dominant confinement in the (hole) quantum dot is found to be in the direction parallel to the tip axis. Electron confinement is achieved by a sub-surface AlGaAs barrier. Current-dependent mea...
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| Hauptverfasser: | , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
11 April 2001
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| In: |
Applied physics. A, Materials science & processing
Year: 2001, Jahrgang: 72, Pages: S239-S242 |
| ISSN: | 1432-0630 |
| DOI: | 10.1007/s003390100668 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1007/s003390100668 |
| Verfasserangaben: | M. Kemerink, K. Sauthoff, P.M. Koenraad, J.W. Gerritsen, H. van Kempen, V.M. Fomin, J.H. Wolter, J.T. Devreese |
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| 520 | |a . We have performed optical spectroscopy measurements on a STM-tip-induced quantum dot in a GaAs layer. The dominant confinement in the (hole) quantum dot is found to be in the direction parallel to the tip axis. Electron confinement is achieved by a sub-surface AlGaAs barrier. Current-dependent measurements indicate that many-body interactions can cause spectral blueshifts up to 75 meV for a tunneling current of 10 nA. Consequently, a full treatment of the many-body problem is required for an accurate description of this type of system. | ||
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