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Optical detection of ballistically injected electrons in III/V heterostructures

. We present a novel spectroscopic technique that is based on the ballistic injection of minority carriers from the tip of a scanning-tunneling microscope into a semiconductor heterostructure. By analyzing the resulting electro-luminescence spectrum as a function of tip-sample bias, both the injecti...

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Hauptverfasser: Kemerink, Martijn (VerfasserIn) , Sauthoff, Katharina (VerfasserIn) , Koenraad, Paulus M. (VerfasserIn) , Gerritsen, J. W. (VerfasserIn) , van Kempen, H. (VerfasserIn) , Wolter, Joachim H. (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 11 April 2001
In: Applied physics. A, Materials science & processing
Year: 2001, Jahrgang: 72, Pages: S201-S204
ISSN:1432-0630
DOI:10.1007/s003390100669
Online-Zugang:Verlag, Volltext: https://doi.org/10.1007/s003390100669
Volltext
Verfasserangaben:M. Kemerink, K. Sauthoff, P.M. Koenraad, J.W. Gerritsen, H. van Kempen, J.H. Wolter

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520 |a . We present a novel spectroscopic technique that is based on the ballistic injection of minority carriers from the tip of a scanning-tunneling microscope into a semiconductor heterostructure. By analyzing the resulting electro-luminescence spectrum as a function of tip-sample bias, both the injection barrier height and the carrier relaxation rate Γs after injection can be determined. At 4.2 K we found Γs=5×1013 s-1 and at 77 K we found Γs=8×1013 s-1. From current-dependent measurements we find that, at room temperature, a large fraction of the carriers is trapped prior to radiative recombination. At high currents or low temperatures the traps become saturated. We tentatively identify the Be acceptors in the structure as trapping centers. 
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