Optical detection of ballistic electrons injected by a scanning-tunneling microscope

We demonstrate a spectroscopic technique which is based on ballistic injection of minority carriers from the tip of a scanning-tunneling microscope into a semiconductor heterostructure. By analyzing the resulting electroluminescence spectrum as a function of tip-sample bias, both the injection barri...

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Hauptverfasser: Kemerink, Martijn (VerfasserIn) , Sauthoff, Katharina (VerfasserIn) , Koenraad, Paulus M. (VerfasserIn) , Gerritsen, J. W. (VerfasserIn) , van Kempen, H. (VerfasserIn) , Wolter, Joachim H. (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 12 March 2001
In: Physical review letters
Year: 2001, Jahrgang: 86, Heft: 11, Pages: 2404-2407
ISSN:1079-7114
DOI:10.1103/PhysRevLett.86.2404
Online-Zugang:Verlag, Volltext: https://doi.org/10.1103/PhysRevLett.86.2404
Verlag, Volltext: https://link.aps.org/doi/10.1103/PhysRevLett.86.2404
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Verfasserangaben:M. Kemerink, K. Sauthoff, P.M. Koenraad, J.W. Gerritsen, H. van Kempen, and J.H. Wolter
Beschreibung
Zusammenfassung:We demonstrate a spectroscopic technique which is based on ballistic injection of minority carriers from the tip of a scanning-tunneling microscope into a semiconductor heterostructure. By analyzing the resulting electroluminescence spectrum as a function of tip-sample bias, both the injection barrier height and the carrier scattering rate in the semiconductor can be determined. This technique is complementary to ballistic electron emission spectroscopy since minority instead of majority carriers are injected, which give the opportunity to study the carrier trajectory after injection.
Beschreibung:Gesehen am 12.12.2019
Beschreibung:Online Resource
ISSN:1079-7114
DOI:10.1103/PhysRevLett.86.2404