Efficient n-doping and hole blocking in single-walled carbon nanotube transistors with 1,2,4,5-tetrakis(tetramethylguanidino)ben-zene
Efficient, stable, and solution-based n-doping of semiconducting single-walled carbon nanotubes (SWCNTs) is highly desired for complementary circuits but remains a significant challenge. Here, we present 1,2,4,5-tetrakis(tetramethylguanidino)benzene (ttmgb) as a strong two-electron donor that enable...
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| Hauptverfasser: | , , , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
May 22, 2018
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| In: |
ACS nano
Year: 2018, Jahrgang: 12, Heft: 6, Pages: 5895-5902 |
| ISSN: | 1936-086X |
| DOI: | 10.1021/acsnano.8b02061 |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/acsnano.8b02061
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| Verfasserangaben: | Severin Schneider, Maximilian Brohmann, Roxana Lorenz, Yvonne J. Hofstetter, Marcel Rother, Eric Sauter, Michael Zharnikov, Yana Vaynzof, Hans-Jörg Himmel, and Jana Zaumseil |
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| 245 | 1 | 0 | |a Efficient n-doping and hole blocking in single-walled carbon nanotube transistors with 1,2,4,5-tetrakis(tetramethylguanidino)ben-zene |c Severin Schneider, Maximilian Brohmann, Roxana Lorenz, Yvonne J. Hofstetter, Marcel Rother, Eric Sauter, Michael Zharnikov, Yana Vaynzof, Hans-Jörg Himmel, and Jana Zaumseil |
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| 520 | |a Efficient, stable, and solution-based n-doping of semiconducting single-walled carbon nanotubes (SWCNTs) is highly desired for complementary circuits but remains a significant challenge. Here, we present 1,2,4,5-tetrakis(tetramethylguanidino)benzene (ttmgb) as a strong two-electron donor that enables the fabrication of purely n-type SWCNT field-effect transistors (FETs). We apply ttmgb to networks of monochiral, semiconducting (6,5) SWCNTs that show intrinsic ambipolar behavior in bottom-contact/top-gate FETs and obtain unipolar n-type transport with 3-5-fold enhancement of electron mobilities (approximately 10cm2V-1s-1), while completely suppressing hole currents, even at high drain voltages. These n-type FETs show excellent on/off current ratios of up to 108, steep subthreshold swings (80-100 mV/dec), and almost no hysteresis. Their excellent device characteristics stem from the reduction of the work function of the gold electrodes via contact doping, blocking of hole injection by ttmgb2+ on the electrode surface, and removal of residual water from the SWCNT network by ttmgb protonation. The ttmgb-treated SWCNT FETs also display excellent environmental stability under bias stress in ambient conditions. Complementary inverters based on n- and p-doped SWCNT FETs exhibit rail-to-rail operation with high gain and low power dissipation. The simple and stable ttmgb molecule thus serves as an example for the larger class of guanidino-functionalized aromatic compounds as promising electron donors for high-performance thin film electronics. | ||
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