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Efficient n-doping and hole blocking in single-walled carbon nanotube transistors with 1,2,4,5-tetrakis(tetramethylguanidino)ben-zene

Efficient, stable, and solution-based n-doping of semiconducting single-walled carbon nanotubes (SWCNTs) is highly desired for complementary circuits but remains a significant challenge. Here, we present 1,2,4,5-tetrakis(tetramethylguanidino)benzene (ttmgb) as a strong two-electron donor that enable...

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Hauptverfasser: Schneider, Severin (VerfasserIn) , Brohmann, Maximilian (VerfasserIn) , Lorenz, Roxana (VerfasserIn) , Hofstetter, Yvonne J. (VerfasserIn) , Rother, Marcel (VerfasserIn) , Sauter, Eric (VerfasserIn) , Zharnikov, Michael (VerfasserIn) , Vaynzof, Yana (VerfasserIn) , Himmel, Hans-Jörg (VerfasserIn) , Zaumseil, Jana (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: May 22, 2018
In: ACS nano
Year: 2018, Jahrgang: 12, Heft: 6, Pages: 5895-5902
ISSN:1936-086X
DOI:10.1021/acsnano.8b02061
Online-Zugang:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/acsnano.8b02061
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Verfasserangaben:Severin Schneider, Maximilian Brohmann, Roxana Lorenz, Yvonne J. Hofstetter, Marcel Rother, Eric Sauter, Michael Zharnikov, Yana Vaynzof, Hans-Jörg Himmel, and Jana Zaumseil
Beschreibung
Zusammenfassung:Efficient, stable, and solution-based n-doping of semiconducting single-walled carbon nanotubes (SWCNTs) is highly desired for complementary circuits but remains a significant challenge. Here, we present 1,2,4,5-tetrakis(tetramethylguanidino)benzene (ttmgb) as a strong two-electron donor that enables the fabrication of purely n-type SWCNT field-effect transistors (FETs). We apply ttmgb to networks of monochiral, semiconducting (6,5) SWCNTs that show intrinsic ambipolar behavior in bottom-contact/top-gate FETs and obtain unipolar n-type transport with 3-5-fold enhancement of electron mobilities (approximately 10cm2V-1s-1), while completely suppressing hole currents, even at high drain voltages. These n-type FETs show excellent on/off current ratios of up to 108, steep subthreshold swings (80-100 mV/dec), and almost no hysteresis. Their excellent device characteristics stem from the reduction of the work function of the gold electrodes via contact doping, blocking of hole injection by ttmgb2+ on the electrode surface, and removal of residual water from the SWCNT network by ttmgb protonation. The ttmgb-treated SWCNT FETs also display excellent environmental stability under bias stress in ambient conditions. Complementary inverters based on n- and p-doped SWCNT FETs exhibit rail-to-rail operation with high gain and low power dissipation. The simple and stable ttmgb molecule thus serves as an example for the larger class of guanidino-functionalized aromatic compounds as promising electron donors for high-performance thin film electronics.
Beschreibung:Published: May 22, 2018
Gesehen am 08.04.2020
Beschreibung:Online Resource
ISSN:1936-086X
DOI:10.1021/acsnano.8b02061

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