Influence of al particle size and firing profile on void formation in rear local contacts of silicon solar cells

In this paper, the influence of Al particle size and the applied firing profile on void formation in local rear contacts of wafer-based silicon solar cells is investigated. Samples with a passivated emitter and rear cell (PERC) rear, but without front metallization, were metalized with six different...

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Hauptverfasser: Dressler, Katharina (VerfasserIn) , Kratt, Martina (VerfasserIn) , Voss, Philipp A. (VerfasserIn) , Ebert, Stefanie (VerfasserIn) , Herguth, Axel (VerfasserIn) , Hahn, Giso (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 2016
In: IEEE journal of photovoltaics
Year: 2015, Jahrgang: 6, Heft: 1, Pages: 68-73
ISSN:2156-3403
DOI:10.1109/JPHOTOV.2015.2491610
Online-Zugang:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1109/JPHOTOV.2015.2491610
Volltext
Verfasserangaben:Katharina Dressler, Martina Kratt, Philipp A. Voss, Stefanie Ebert, Axel Herguth, Giso Hahn

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520 |a In this paper, the influence of Al particle size and the applied firing profile on void formation in local rear contacts of wafer-based silicon solar cells is investigated. Samples with a passivated emitter and rear cell (PERC) rear, but without front metallization, were metalized with six different Al screen-printing pastes, i.e., both commercial and homemade, featuring different particle size distributions and fired in a rapid thermal processing furnace with different firing profiles. Voids were detected with scanning acoustic microscopy measurements, and the fraction of voids in rear local contacts was analyzed. It was shown that the heating phase of the firing process has the strongest influence on void formation. With slower heating, void formation could be reduced to a fraction lower than 5% of the local contact area. Furthermore, it was shown that Al pastes consisting of a mixture of small and large Al particle sizes have a positive effect on the formation of voids. 
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650 4 |a acoustic microscopy 
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650 4 |a Crystalline silicon 
650 4 |a elemental semiconductors 
650 4 |a firing 
650 4 |a firing (materials) 
650 4 |a firing profile 
650 4 |a front metallization 
650 4 |a Heating 
650 4 |a Microscopy 
650 4 |a particle size 
650 4 |a passivated emitter and rear cell (PERC) 
650 4 |a PERC rear 
650 4 |a Photovoltaic cells 
650 4 |a Photovoltaic systems 
650 4 |a rear local contacts 
650 4 |a scanning acoustic microscopy 
650 4 |a Si 
650 4 |a silicon 
650 4 |a Silicon 
650 4 |a solar cells 
650 4 |a void formation 
650 4 |a voids 
650 4 |a voids (solid) 
650 4 |a wafer based silicon solar cells 
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700 1 |a Herguth, Axel  |e VerfasserIn  |4 aut 
700 1 |a Hahn, Giso  |e VerfasserIn  |4 aut 
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