An electroactive metallo-polypyrene film as a molecular scaffold for multi-state volatile memory devices

In this report, an anodically electropolymerized smart film is utilized for memory storage up to quaternary states via adjustable electrical commands. The ruthenium-terpyridine complex based polypyrene film is adherent and robust enough to withstand a large number of read-write cycles (∼5 × 102) and...

Full description

Saved in:
Bibliographic Details
Main Authors: Chhatwal, Megha (Author) , Kumar, Anup (Author) , Awasthi, Satish K. (Author) , Zharnikov, Michael (Author) , Gupta, Rinkoo D. (Author)
Format: Article (Journal)
Language:English
Published: January 8, 2016
In: The journal of physical chemistry. C, Energy, materials, and catalysis
Year: 2016, Volume: 120, Issue: 4, Pages: 2335-2342
ISSN:1932-7455
DOI:10.1021/acs.jpcc.5b12597
Online Access:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/acs.jpcc.5b12597
Get full text
Author Notes:Megha Chhatwal, Anup Kumar, Satish K. Awasthi, Michael Zharnikov and Rinkoo D. Gupta
Description
Summary:In this report, an anodically electropolymerized smart film is utilized for memory storage up to quaternary states via adjustable electrical commands. The ruthenium-terpyridine complex based polypyrene film is adherent and robust enough to withstand a large number of read-write cycles (∼5 × 102) and harsh temperature conditions (∼200 °C) for facile chip-lithography. Importantly, this polymeric system is a promising molecular alternative for silicon-based static random access memory (SRAM) and provides data storage density even higher than that generated by flip-flop and flip-flap-flop logic circuits. The film enables a data storage density of up to ∼4 × 1015 bits/cm2, controlled precisely by applied voltage and accessed optically. In this way, it fulfills the essential criteria for successful realization of an economically viable molecular chip with enormous storage capability as compared to analogous silicon based devices.
Item Description:Gesehen am 30.04.2020
Physical Description:Online Resource
ISSN:1932-7455
DOI:10.1021/acs.jpcc.5b12597