Self-assembled monolayer dielectrics for low-voltage carbon nanotube transistors with controlled network density
Control of the density and uniformity of semiconducting single-walled carbon nanotube (SWNT) networks is crucial for their application in field-effect transistors (FETs) and critically depends on the surface of the substrate. Here, the concept of self-assembled monolayer (SAM) dielectrics on aluminu...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
July 20, 2016
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| In: |
Advanced materials interfaces
Year: 2016, Jahrgang: 3, Heft: 18 |
| ISSN: | 2196-7350 |
| DOI: | 10.1002/admi.201600215 |
| Online-Zugang: | Resolving-System, lizenzpflichtig, Volltext: https://doi.org/10.1002/admi.201600215 Verlag, lizenzpflichtig, Volltext: https://onlinelibrary.wiley.com/doi/abs/10.1002/admi.201600215 
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| Verfasserangaben: | Stefan P. Schießl, Florentina Gannott, Sebastian H. Etschel, Manuel Schweiger, Saeideh Grünler, Marcus Halik, and Jana Zaumseil |
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| 520 | |a Control of the density and uniformity of semiconducting single-walled carbon nanotube (SWNT) networks is crucial for their application in field-effect transistors (FETs) and critically depends on the surface of the substrate. Here, the concept of self-assembled monolayer (SAM) dielectrics on aluminum/aluminum oxide bottom-gate electrodes is used to create low-voltage (<2 V) FETs with SWNT networks. | ||
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