Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors
In this work we examine small conjugated molecules bearing a thiol headgroup as self assembled monolayers (SAM). Functional groups in the SAM-active molecule shift the work function of gold to n-channel semiconductor regimes and improve the wettability of the surface. We examine the effect of the pr...
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| Hauptverfasser: | , , , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
August 28, 2015
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| In: |
Langmuir
Year: 2015, Jahrgang: 31, Heft: 37, Pages: 10303-10309 |
| ISSN: | 1520-5827 |
| DOI: | 10.1021/acs.langmuir.5b02316 |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/acs.langmuir.5b02316 |
| Verfasserangaben: | Malte Jesper, Milan Alt, Janusz Schinke, Sabina Hillebrandt, Iva Angelova, Valentina Rohnacher, Annemarie Pucci, Uli Lemmer, Wolfram Jaegermann, Wolfgang Kowalsky, Tobias Glaser, Eric Mankel, Robert Lovrincic, Florian Golling, Manuel Hamburger, and Uwe H.F. Bunz |
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| LEADER | 00000caa a2200000 c 4500 | ||
|---|---|---|---|
| 001 | 170019755X | ||
| 003 | DE-627 | ||
| 005 | 20230427020021.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 200609s2015 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1021/acs.langmuir.5b02316 |2 doi | |
| 035 | |a (DE-627)170019755X | ||
| 035 | |a (DE-599)KXP170019755X | ||
| 035 | |a (OCoLC)1341339172 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 084 | |a 29 |2 sdnb | ||
| 100 | 1 | |a Jesper, Malte |e VerfasserIn |0 (DE-588)1079182829 |0 (DE-627)840590970 |0 (DE-576)452244145 |4 aut | |
| 245 | 1 | 0 | |a Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors |c Malte Jesper, Milan Alt, Janusz Schinke, Sabina Hillebrandt, Iva Angelova, Valentina Rohnacher, Annemarie Pucci, Uli Lemmer, Wolfram Jaegermann, Wolfgang Kowalsky, Tobias Glaser, Eric Mankel, Robert Lovrincic, Florian Golling, Manuel Hamburger, and Uwe H.F. Bunz |
| 264 | 1 | |c August 28, 2015 | |
| 300 | |a 7 | ||
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a Gesehen am 09.06.2020 | ||
| 520 | |a In this work we examine small conjugated molecules bearing a thiol headgroup as self assembled monolayers (SAM). Functional groups in the SAM-active molecule shift the work function of gold to n-channel semiconductor regimes and improve the wettability of the surface. We examine the effect of the presence of methylene linkers on the orientation of the molecule within the SAM. 3,4,5-Trimethoxythiophenol (TMP-SH) and 3,4,5-trimethoxybenzylthiol (TMP-CH2-SH) were first subjected to computational analysis, predicting work function shifts of −430 and −310 meV. Contact angle measurements show an increase in the wetting envelope compared to that of pristine gold. Infrared (IR) measurements show tilt angles of 22 and 63°, with the methylene-linked molecule (TMP-CH2-SH) attaining a flatter orientation. The actual work function shift as measured with photoemission spectroscopy (XPS/UPS) is even larger, −600 and −430 meV, respectively. The contact resistance between gold electrodes and poly[N,N′-bis(2-octyldodecyl)-naphthalene-1,4:5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene) (Polyera Aktive Ink, N2200) in n-type OFETs is demonstrated to decrease by 3 orders of magnitude due to the use of TMP-SH and TMP-CH2-SH. The effective mobility was enhanced by two orders of magnitude, significantly decreasing the contact resistance to match the mobilities reported for N2200 with optimized electrodes. | ||
| 700 | 1 | |a Hillebrandt, Sabina |d 1987- |e VerfasserIn |0 (DE-588)107115737X |0 (DE-627)825616832 |0 (DE-576)432976299 |4 aut | |
| 700 | 1 | |a Rohnacher, Valentina |d 1993- |e VerfasserIn |0 (DE-588)1161434429 |0 (DE-627)1024731324 |0 (DE-576)506521141 |4 aut | |
| 700 | 1 | |a Pucci, Annemarie |e VerfasserIn |0 (DE-588)1020648783 |0 (DE-627)691291969 |0 (DE-576)361698739 |4 aut | |
| 700 | 1 | |a Lemmer, Uli |e VerfasserIn |0 (DE-588)1071004476 |0 (DE-627)825496233 |0 (DE-576)190067748 |4 aut | |
| 700 | 1 | |a Kowalsky, Wolfgang |d 1958- |e VerfasserIn |0 (DE-588)141902981 |0 (DE-627)632470402 |0 (DE-576)326758151 |4 aut | |
| 700 | 1 | |a Glaser, Tobias |d 1982- |e VerfasserIn |0 (DE-588)1033819654 |0 (DE-627)743831330 |0 (DE-576)381480305 |4 aut | |
| 700 | 1 | |a Lovrinčić, Robert |e VerfasserIn |0 (DE-588)138299900 |0 (DE-627)601107594 |0 (DE-576)307080560 |4 aut | |
| 700 | 1 | |a Hamburger, Manuel |d 1978- |e VerfasserIn |0 (DE-588)138805660 |0 (DE-627)606143165 |0 (DE-576)309178258 |4 aut | |
| 700 | 1 | |a Bunz, Uwe H. F. |d 1963- |e VerfasserIn |0 (DE-588)1080488456 |0 (DE-627)844723223 |0 (DE-576)181112833 |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Langmuir |d Washington, DC : ACS Publ., 1985 |g 31(2015), 37, Seite 10303-10309 |h Online-Ressource |w (DE-627)320450031 |w (DE-600)2005937-1 |w (DE-576)090888723 |x 1520-5827 |7 nnas |a Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors |
| 773 | 1 | 8 | |g volume:31 |g year:2015 |g number:37 |g pages:10303-10309 |g extent:7 |a Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors |
| 856 | 4 | 0 | |u https://doi.org/10.1021/acs.langmuir.5b02316 |x Verlag |x Resolving-System |z lizenzpflichtig |3 Volltext |
| 951 | |a AR | ||
| 992 | |a 20200609 | ||
| 993 | |a Article | ||
| 994 | |a 2015 | ||
| 998 | |g 1080488456 |a Bunz, Uwe H. F. |m 1080488456:Bunz, Uwe H. F. |d 120000 |d 120100 |e 120000PB1080488456 |e 120100PB1080488456 |k 0/120000/ |k 1/120000/120100/ |p 16 |y j | ||
| 998 | |g 138805660 |a Hamburger, Manuel |m 138805660:Hamburger, Manuel |p 15 | ||
| 998 | |g 138299900 |a Lovrinčić, Robert |m 138299900:Lovrinčić, Robert |d 130000 |d 130700 |e 130000PL138299900 |e 130700PL138299900 |k 0/130000/ |k 1/130000/130700/ |p 13 | ||
| 998 | |g 1033819654 |a Glaser, Tobias |m 1033819654:Glaser, Tobias |p 11 | ||
| 998 | |g 141902981 |a Kowalsky, Wolfgang |m 141902981:Kowalsky, Wolfgang |d 130000 |e 130000PK141902981 |k 0/130000/ |p 10 | ||
| 998 | |g 1071004476 |a Lemmer, Uli |m 1071004476:Lemmer, Uli |d 130000 |e 130000PL1071004476 |k 0/130000/ |p 8 | ||
| 998 | |g 1020648783 |a Pucci, Annemarie |m 1020648783:Pucci, Annemarie |d 130000 |d 130700 |e 130000PP1020648783 |e 130700PP1020648783 |k 0/130000/ |k 1/130000/130700/ |p 7 | ||
| 998 | |g 1161434429 |a Rohnacher, Valentina |m 1161434429:Rohnacher, Valentina |p 6 | ||
| 998 | |g 107115737X |a Hillebrandt, Sabina |m 107115737X:Hillebrandt, Sabina |d 130000 |d 130700 |e 130000PH107115737X |e 130700PH107115737X |k 0/130000/ |k 1/130000/130700/ |p 4 | ||
| 998 | |g 1079182829 |a Jesper, Malte |m 1079182829:Jesper, Malte |p 1 |x j | ||
| 999 | |a KXP-PPN170019755X |e 3684436062 | ||
| BIB | |a Y | ||
| SER | |a journal | ||
| JSO | |a {"name":{"displayForm":["Malte Jesper, Milan Alt, Janusz Schinke, Sabina Hillebrandt, Iva Angelova, Valentina Rohnacher, Annemarie Pucci, Uli Lemmer, Wolfram Jaegermann, Wolfgang Kowalsky, Tobias Glaser, Eric Mankel, Robert Lovrincic, Florian Golling, Manuel Hamburger, and Uwe H.F. Bunz"]},"id":{"eki":["170019755X"],"doi":["10.1021/acs.langmuir.5b02316"]},"origin":[{"dateIssuedDisp":"August 28, 2015","dateIssuedKey":"2015"}],"relHost":[{"pubHistory":["1.1985 -"],"part":{"extent":"7","text":"31(2015), 37, Seite 10303-10309","volume":"31","issue":"37","pages":"10303-10309","year":"2015"},"type":{"media":"Online-Ressource","bibl":"periodical"},"note":["Gesehen am 01.12.2020"],"disp":"Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistorsLangmuir","language":["eng"],"recId":"320450031","title":[{"subtitle":"the ACS journal of surfaces and colloids","title":"Langmuir","title_sort":"Langmuir"}],"physDesc":[{"extent":"Online-Ressource"}],"origin":[{"publisherPlace":"Washington, DC","dateIssuedKey":"1985","publisher":"ACS Publ.","dateIssuedDisp":"1985-"}],"id":{"eki":["320450031"],"zdb":["2005937-1"],"issn":["1520-5827"]},"name":{"displayForm":["American Chemical Society"]}}],"physDesc":[{"extent":"7 S."}],"person":[{"role":"aut","display":"Jesper, Malte","roleDisplay":"VerfasserIn","given":"Malte","family":"Jesper"},{"display":"Hillebrandt, Sabina","roleDisplay":"VerfasserIn","role":"aut","family":"Hillebrandt","given":"Sabina"},{"roleDisplay":"VerfasserIn","display":"Rohnacher, Valentina","role":"aut","family":"Rohnacher","given":"Valentina"},{"roleDisplay":"VerfasserIn","display":"Pucci, Annemarie","role":"aut","family":"Pucci","given":"Annemarie"},{"role":"aut","roleDisplay":"VerfasserIn","display":"Lemmer, Uli","given":"Uli","family":"Lemmer"},{"family":"Kowalsky","given":"Wolfgang","display":"Kowalsky, Wolfgang","roleDisplay":"VerfasserIn","role":"aut"},{"role":"aut","display":"Glaser, Tobias","roleDisplay":"VerfasserIn","given":"Tobias","family":"Glaser"},{"family":"Lovrinčić","given":"Robert","display":"Lovrinčić, Robert","roleDisplay":"VerfasserIn","role":"aut"},{"role":"aut","display":"Hamburger, Manuel","roleDisplay":"VerfasserIn","given":"Manuel","family":"Hamburger"},{"display":"Bunz, Uwe H. F.","roleDisplay":"VerfasserIn","role":"aut","family":"Bunz","given":"Uwe H. F."}],"title":[{"title_sort":"Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors","title":"Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors"}],"recId":"170019755X","language":["eng"],"type":{"media":"Online-Ressource","bibl":"article-journal"},"note":["Gesehen am 09.06.2020"]} | ||
| SRT | |a JESPERMALTDIPOLARSAM2820 | ||