Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors

In this work we examine small conjugated molecules bearing a thiol headgroup as self assembled monolayers (SAM). Functional groups in the SAM-active molecule shift the work function of gold to n-channel semiconductor regimes and improve the wettability of the surface. We examine the effect of the pr...

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Hauptverfasser: Jesper, Malte (VerfasserIn) , Hillebrandt, Sabina (VerfasserIn) , Rohnacher, Valentina (VerfasserIn) , Pucci, Annemarie (VerfasserIn) , Lemmer, Uli (VerfasserIn) , Kowalsky, Wolfgang (VerfasserIn) , Glaser, Tobias (VerfasserIn) , Lovrinčić, Robert (VerfasserIn) , Hamburger, Manuel (VerfasserIn) , Bunz, Uwe H. F. (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: August 28, 2015
In: Langmuir
Year: 2015, Jahrgang: 31, Heft: 37, Pages: 10303-10309
ISSN:1520-5827
DOI:10.1021/acs.langmuir.5b02316
Online-Zugang:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/acs.langmuir.5b02316
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Verfasserangaben:Malte Jesper, Milan Alt, Janusz Schinke, Sabina Hillebrandt, Iva Angelova, Valentina Rohnacher, Annemarie Pucci, Uli Lemmer, Wolfram Jaegermann, Wolfgang Kowalsky, Tobias Glaser, Eric Mankel, Robert Lovrincic, Florian Golling, Manuel Hamburger, and Uwe H.F. Bunz

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LEADER 00000caa a2200000 c 4500
001 170019755X
003 DE-627
005 20230427020021.0
007 cr uuu---uuuuu
008 200609s2015 xx |||||o 00| ||eng c
024 7 |a 10.1021/acs.langmuir.5b02316  |2 doi 
035 |a (DE-627)170019755X 
035 |a (DE-599)KXP170019755X 
035 |a (OCoLC)1341339172 
040 |a DE-627  |b ger  |c DE-627  |e rda 
041 |a eng 
084 |a 29  |2 sdnb 
100 1 |a Jesper, Malte  |e VerfasserIn  |0 (DE-588)1079182829  |0 (DE-627)840590970  |0 (DE-576)452244145  |4 aut 
245 1 0 |a Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors  |c Malte Jesper, Milan Alt, Janusz Schinke, Sabina Hillebrandt, Iva Angelova, Valentina Rohnacher, Annemarie Pucci, Uli Lemmer, Wolfram Jaegermann, Wolfgang Kowalsky, Tobias Glaser, Eric Mankel, Robert Lovrincic, Florian Golling, Manuel Hamburger, and Uwe H.F. Bunz 
264 1 |c August 28, 2015 
300 |a 7 
336 |a Text  |b txt  |2 rdacontent 
337 |a Computermedien  |b c  |2 rdamedia 
338 |a Online-Ressource  |b cr  |2 rdacarrier 
500 |a Gesehen am 09.06.2020 
520 |a In this work we examine small conjugated molecules bearing a thiol headgroup as self assembled monolayers (SAM). Functional groups in the SAM-active molecule shift the work function of gold to n-channel semiconductor regimes and improve the wettability of the surface. We examine the effect of the presence of methylene linkers on the orientation of the molecule within the SAM. 3,4,5-Trimethoxythiophenol (TMP-SH) and 3,4,5-trimethoxybenzylthiol (TMP-CH2-SH) were first subjected to computational analysis, predicting work function shifts of −430 and −310 meV. Contact angle measurements show an increase in the wetting envelope compared to that of pristine gold. Infrared (IR) measurements show tilt angles of 22 and 63°, with the methylene-linked molecule (TMP-CH2-SH) attaining a flatter orientation. The actual work function shift as measured with photoemission spectroscopy (XPS/UPS) is even larger, −600 and −430 meV, respectively. The contact resistance between gold electrodes and poly[N,N′-bis(2-octyldodecyl)-naphthalene-1,4:5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene) (Polyera Aktive Ink, N2200) in n-type OFETs is demonstrated to decrease by 3 orders of magnitude due to the use of TMP-SH and TMP-CH2-SH. The effective mobility was enhanced by two orders of magnitude, significantly decreasing the contact resistance to match the mobilities reported for N2200 with optimized electrodes. 
700 1 |a Hillebrandt, Sabina  |d 1987-  |e VerfasserIn  |0 (DE-588)107115737X  |0 (DE-627)825616832  |0 (DE-576)432976299  |4 aut 
700 1 |a Rohnacher, Valentina  |d 1993-  |e VerfasserIn  |0 (DE-588)1161434429  |0 (DE-627)1024731324  |0 (DE-576)506521141  |4 aut 
700 1 |a Pucci, Annemarie  |e VerfasserIn  |0 (DE-588)1020648783  |0 (DE-627)691291969  |0 (DE-576)361698739  |4 aut 
700 1 |a Lemmer, Uli  |e VerfasserIn  |0 (DE-588)1071004476  |0 (DE-627)825496233  |0 (DE-576)190067748  |4 aut 
700 1 |a Kowalsky, Wolfgang  |d 1958-  |e VerfasserIn  |0 (DE-588)141902981  |0 (DE-627)632470402  |0 (DE-576)326758151  |4 aut 
700 1 |a Glaser, Tobias  |d 1982-  |e VerfasserIn  |0 (DE-588)1033819654  |0 (DE-627)743831330  |0 (DE-576)381480305  |4 aut 
700 1 |a Lovrinčić, Robert  |e VerfasserIn  |0 (DE-588)138299900  |0 (DE-627)601107594  |0 (DE-576)307080560  |4 aut 
700 1 |a Hamburger, Manuel  |d 1978-  |e VerfasserIn  |0 (DE-588)138805660  |0 (DE-627)606143165  |0 (DE-576)309178258  |4 aut 
700 1 |a Bunz, Uwe H. F.  |d 1963-  |e VerfasserIn  |0 (DE-588)1080488456  |0 (DE-627)844723223  |0 (DE-576)181112833  |4 aut 
773 0 8 |i Enthalten in  |t Langmuir  |d Washington, DC : ACS Publ., 1985  |g 31(2015), 37, Seite 10303-10309  |h Online-Ressource  |w (DE-627)320450031  |w (DE-600)2005937-1  |w (DE-576)090888723  |x 1520-5827  |7 nnas  |a Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors 
773 1 8 |g volume:31  |g year:2015  |g number:37  |g pages:10303-10309  |g extent:7  |a Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors 
856 4 0 |u https://doi.org/10.1021/acs.langmuir.5b02316  |x Verlag  |x Resolving-System  |z lizenzpflichtig  |3 Volltext 
951 |a AR 
992 |a 20200609 
993 |a Article 
994 |a 2015 
998 |g 1080488456  |a Bunz, Uwe H. F.  |m 1080488456:Bunz, Uwe H. F.  |d 120000  |d 120100  |e 120000PB1080488456  |e 120100PB1080488456  |k 0/120000/  |k 1/120000/120100/  |p 16  |y j 
998 |g 138805660  |a Hamburger, Manuel  |m 138805660:Hamburger, Manuel  |p 15 
998 |g 138299900  |a Lovrinčić, Robert  |m 138299900:Lovrinčić, Robert  |d 130000  |d 130700  |e 130000PL138299900  |e 130700PL138299900  |k 0/130000/  |k 1/130000/130700/  |p 13 
998 |g 1033819654  |a Glaser, Tobias  |m 1033819654:Glaser, Tobias  |p 11 
998 |g 141902981  |a Kowalsky, Wolfgang  |m 141902981:Kowalsky, Wolfgang  |d 130000  |e 130000PK141902981  |k 0/130000/  |p 10 
998 |g 1071004476  |a Lemmer, Uli  |m 1071004476:Lemmer, Uli  |d 130000  |e 130000PL1071004476  |k 0/130000/  |p 8 
998 |g 1020648783  |a Pucci, Annemarie  |m 1020648783:Pucci, Annemarie  |d 130000  |d 130700  |e 130000PP1020648783  |e 130700PP1020648783  |k 0/130000/  |k 1/130000/130700/  |p 7 
998 |g 1161434429  |a Rohnacher, Valentina  |m 1161434429:Rohnacher, Valentina  |p 6 
998 |g 107115737X  |a Hillebrandt, Sabina  |m 107115737X:Hillebrandt, Sabina  |d 130000  |d 130700  |e 130000PH107115737X  |e 130700PH107115737X  |k 0/130000/  |k 1/130000/130700/  |p 4 
998 |g 1079182829  |a Jesper, Malte  |m 1079182829:Jesper, Malte  |p 1  |x j 
999 |a KXP-PPN170019755X  |e 3684436062 
BIB |a Y 
SER |a journal 
JSO |a {"name":{"displayForm":["Malte Jesper, Milan Alt, Janusz Schinke, Sabina Hillebrandt, Iva Angelova, Valentina Rohnacher, Annemarie Pucci, Uli Lemmer, Wolfram Jaegermann, Wolfgang Kowalsky, Tobias Glaser, Eric Mankel, Robert Lovrincic, Florian Golling, Manuel Hamburger, and Uwe H.F. Bunz"]},"id":{"eki":["170019755X"],"doi":["10.1021/acs.langmuir.5b02316"]},"origin":[{"dateIssuedDisp":"August 28, 2015","dateIssuedKey":"2015"}],"relHost":[{"pubHistory":["1.1985 -"],"part":{"extent":"7","text":"31(2015), 37, Seite 10303-10309","volume":"31","issue":"37","pages":"10303-10309","year":"2015"},"type":{"media":"Online-Ressource","bibl":"periodical"},"note":["Gesehen am 01.12.2020"],"disp":"Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistorsLangmuir","language":["eng"],"recId":"320450031","title":[{"subtitle":"the ACS journal of surfaces and colloids","title":"Langmuir","title_sort":"Langmuir"}],"physDesc":[{"extent":"Online-Ressource"}],"origin":[{"publisherPlace":"Washington, DC","dateIssuedKey":"1985","publisher":"ACS Publ.","dateIssuedDisp":"1985-"}],"id":{"eki":["320450031"],"zdb":["2005937-1"],"issn":["1520-5827"]},"name":{"displayForm":["American Chemical Society"]}}],"physDesc":[{"extent":"7 S."}],"person":[{"role":"aut","display":"Jesper, Malte","roleDisplay":"VerfasserIn","given":"Malte","family":"Jesper"},{"display":"Hillebrandt, Sabina","roleDisplay":"VerfasserIn","role":"aut","family":"Hillebrandt","given":"Sabina"},{"roleDisplay":"VerfasserIn","display":"Rohnacher, Valentina","role":"aut","family":"Rohnacher","given":"Valentina"},{"roleDisplay":"VerfasserIn","display":"Pucci, Annemarie","role":"aut","family":"Pucci","given":"Annemarie"},{"role":"aut","roleDisplay":"VerfasserIn","display":"Lemmer, Uli","given":"Uli","family":"Lemmer"},{"family":"Kowalsky","given":"Wolfgang","display":"Kowalsky, Wolfgang","roleDisplay":"VerfasserIn","role":"aut"},{"role":"aut","display":"Glaser, Tobias","roleDisplay":"VerfasserIn","given":"Tobias","family":"Glaser"},{"family":"Lovrinčić","given":"Robert","display":"Lovrinčić, Robert","roleDisplay":"VerfasserIn","role":"aut"},{"role":"aut","display":"Hamburger, Manuel","roleDisplay":"VerfasserIn","given":"Manuel","family":"Hamburger"},{"display":"Bunz, Uwe H. F.","roleDisplay":"VerfasserIn","role":"aut","family":"Bunz","given":"Uwe H. F."}],"title":[{"title_sort":"Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors","title":"Dipolar SAMs reduce charge carrier injection barriers in n-channel organic field effect transistors"}],"recId":"170019755X","language":["eng"],"type":{"media":"Online-Ressource","bibl":"article-journal"},"note":["Gesehen am 09.06.2020"]} 
SRT |a JESPERMALTDIPOLARSAM2820