Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm
High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on a 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitizatio...
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| Hauptverfasser: | , , , , , , , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
19 July 2018
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| In: |
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
Year: 2018, Jahrgang: 905, Pages: 53-60 |
| ISSN: | 1872-9576 |
| DOI: | 10.1016/j.nima.2018.07.044 |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1016/j.nima.2018.07.044 Verlag, lizenzpflichtig, Volltext: http://www.sciencedirect.com/science/article/pii/S0168900218308799 
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| Verfasserangaben: | H. Augustin, N. Berger, S. Dittmeier, J. Hammerich, A. Herkert, L. Huth, D. Immig, J. Kröger, F. Meier, I. Perić, A.-K. Perrevoort, A. Schöning, D. vom Bruch, D. Wiedner |
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| 245 | 1 | 0 | |a Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm |c H. Augustin, N. Berger, S. Dittmeier, J. Hammerich, A. Herkert, L. Huth, D. Immig, J. Kröger, F. Meier, I. Perić, A.-K. Perrevoort, A. Schöning, D. vom Bruch, D. Wiedner |
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| 520 | |a High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on a 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process, features a fully integrated on-chip readout, i.e. hit-digitization, zero suppression and data serialization. MuPix7 is the first fully monolithic HV-CMOS pixel sensor that has been tested for the use in high irradiation environments like HL-LHC. We present results from laboratory and test beam measurements of MuPix7 prototypes irradiated with neutrons (up to 5.0 × 1015 neq/cm2) and 24 GeV protons (up to 7.8 × 1015 protons/cm2) and compare the performance with non-irradiated sensors. At sensor temperatures of about 8 °C efficiencies of ≥90% at noise rates below 40 Hz per pixel are measured for fluences of up to 1.5 × 1015 neq/cm2. A time resolution better than 22 ns, expressed as Gaussian σ, is measured for all tested settings and sensors, even at the highest irradiation fluences. The data transmission at 1.25 Gbit/s and the on-chip PLL remain fully functional. | ||
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