Cover Image

The effect of tuning the microstructure of TIPS-tetraazapentacene on the performance of solution processed thin film transistors

We report a comprehensive study of the symmetrical 6,13-bis(triisopropylsilylethynyl)tetraazapentacene (TIPS-TAP) used as an electron transporting material in organic field-effect transistors. We study the optical, electronic, structural and morphological properties of thin films of TIPS-TAP as depo...

Full description

Saved in:
Bibliographic Details
Main Authors: Paulus, Fabian (Author) , Engelhart, Jens U. (Author) , Hopkinson, Paul E. (Author) , Schimpf, Christian (Author) , Leineweber, Andreas (Author) , Sirringhaus, Henning (Author) , Vaynzof, Yana (Author) , Bunz, Uwe H. F. (Author)
Format: Article (Journal)
Language:English
Published: 2016
In: Journal of materials chemistry. C, Materials for optical and electronic devices
Year: 2016, Volume: 4, Issue: 6, Pages: 1194-1200
ISSN:2050-7534
DOI:10.1039/C5TC03326H
Online Access:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1039/C5TC03326H
Verlag, lizenzpflichtig, Volltext: https://pubs.rsc.org/en/content/articlelanding/2016/tc/c5tc03326h
Get full text
Author Notes:Fabian Paulus, Jens U. Engelhart, Paul E. Hopkinson, Christian Schimpf, Andreas Leineweber, Henning Sirringhaus, Yana Vaynzof, and Uwe H. F. Bunz
Description
Summary:We report a comprehensive study of the symmetrical 6,13-bis(triisopropylsilylethynyl)tetraazapentacene (TIPS-TAP) used as an electron transporting material in organic field-effect transistors. We study the optical, electronic, structural and morphological properties of thin films of TIPS-TAP as deposited by spin-coating and zone-casting techniques. Depending on the solution processing conditions and procedures we find a variety of microstructures for TIPS-TAP ranging from highly polycrystalline to well-aligned crystalline films. Field-effect transistors are fabricated in two different architectures to evaluate the charge transport properties of TIPS-TAP in such films, and bias-stress experiments reveal a good electric stability of TIPS-TAP. The extracted electron mobilities vary over several orders of magnitude depending on the resulting morphology of the active layer reaching a maximum of 0.42 cm2 V−1 s−1 for uniaxial aligned crystallites in zone-cast transistors.
Item Description:Gesehen am 18.06.2020
Physical Description:Online Resource
ISSN:2050-7534
DOI:10.1039/C5TC03326H

Similar Items