The effect of tuning the microstructure of TIPS-tetraazapentacene on the performance of solution processed thin film transistors
We report a comprehensive study of the symmetrical 6,13-bis(triisopropylsilylethynyl)tetraazapentacene (TIPS-TAP) used as an electron transporting material in organic field-effect transistors. We study the optical, electronic, structural and morphological properties of thin films of TIPS-TAP as depo...
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| Hauptverfasser: | , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
2016
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| In: |
Journal of materials chemistry. C, Materials for optical and electronic devices
Year: 2016, Jahrgang: 4, Heft: 6, Pages: 1194-1200 |
| ISSN: | 2050-7534 |
| DOI: | 10.1039/C5TC03326H |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1039/C5TC03326H Verlag, lizenzpflichtig, Volltext: https://pubs.rsc.org/en/content/articlelanding/2016/tc/c5tc03326h 
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| Verfasserangaben: | Fabian Paulus, Jens U. Engelhart, Paul E. Hopkinson, Christian Schimpf, Andreas Leineweber, Henning Sirringhaus, Yana Vaynzof, and Uwe H. F. Bunz |
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| 520 | |a We report a comprehensive study of the symmetrical 6,13-bis(triisopropylsilylethynyl)tetraazapentacene (TIPS-TAP) used as an electron transporting material in organic field-effect transistors. We study the optical, electronic, structural and morphological properties of thin films of TIPS-TAP as deposited by spin-coating and zone-casting techniques. Depending on the solution processing conditions and procedures we find a variety of microstructures for TIPS-TAP ranging from highly polycrystalline to well-aligned crystalline films. Field-effect transistors are fabricated in two different architectures to evaluate the charge transport properties of TIPS-TAP in such films, and bias-stress experiments reveal a good electric stability of TIPS-TAP. The extracted electron mobilities vary over several orders of magnitude depending on the resulting morphology of the active layer reaching a maximum of 0.42 cm2 V−1 s−1 for uniaxial aligned crystallites in zone-cast transistors. | ||
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