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N,N′-dihydrotetraazapentacenes (DHTA) in thin film transistors

The synthesis and structural properties of three N,N′-dihydrotetraazapentacenes (DHTA) are described. The different substitution pattern (H, F, Cl) of the dihydrotetraazapentacene body exhibited a significant effect on the optical, electronic and morphological properties of the derivatives in thin f...

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Hauptverfasser: Paulus, Fabian (VerfasserIn) , Lindner, Benjamin (VerfasserIn) , Reiß, Hilmar (VerfasserIn) , Rominger, Frank (VerfasserIn) , Leineweber, Andreas (VerfasserIn) , Vaynzof, Yana (VerfasserIn) , Sirringhaus, Henning (VerfasserIn) , Bunz, Uwe H. F. (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 2015
In: Journal of materials chemistry. C, Materials for optical and electronic devices
Year: 2015, Jahrgang: 3, Heft: 7, Pages: 1604-1609
ISSN:2050-7534
DOI:10.1039/C4TC02426E
Online-Zugang:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1039/C4TC02426E
Verlag, lizenzpflichtig, Volltext: https://pubs.rsc.org/en/content/articlelanding/2015/tc/c4tc02426e
Volltext
Verfasserangaben:Fabian Paulus, Benjamin D. Lindner, Hilmar Reiß, Frank Rominger, Andreas Leineweber, Yana Vaynzof, Henning Sirringhaus and Uwe H.F. Bunz
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Zusammenfassung:The synthesis and structural properties of three N,N′-dihydrotetraazapentacenes (DHTA) are described. The different substitution pattern (H, F, Cl) of the dihydrotetraazapentacene body exhibited a significant effect on the optical, electronic and morphological properties of the derivatives in thin films. The synthesised materials were investigated as active layers in top gate/bottom contact (BC/TG) transistors. The transistor performance of the dichlorinated derivative was almost independent on the processing conditions with an average hole mobility of ∼0.04 cm2 V−1 s−1 and best mobility values ranging from 0.07 to 0.11 cm2 V−1 s−1. Each of the three derivatives was found to exhibit an individual packing motif in solution grown crystals, determined by single crystal X-ray analysis. Surprisingly, for all three materials a different polymorph formed in spin cast films explaining the observed morphology and FET performance.
Beschreibung:Published on 18 December 2014
Gesehen am 20.07.2020
Beschreibung:Online Resource
ISSN:2050-7534
DOI:10.1039/C4TC02426E

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