Characterization of aluminum oxide tunnel barriers by combining transport measurements and transmission electron microscopy imaging

We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magni...

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Main Authors: Aref, Thomas (Author) , Averin, A. (Author) , van Dijken, S. (Author) , Ferring-Siebert, Anna (Author) , Koberidze, M. (Author) , Maisi, V. F. (Author) , Nguyend, H. Q. (Author) , Nieminen, R. M. (Author) , Pekola, J. P. (Author) , Yao, L. D. (Author)
Format: Article (Journal)
Language:English
Published: 19 August 2014
In: Journal of applied physics
Year: 2014, Volume: 116, Issue: 7
ISSN:1089-7550
DOI:10.1063/1.4893473
Online Access:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1063/1.4893473
Verlag, lizenzpflichtig, Volltext: https://aip.scitation.org/doi/10.1063/1.4893473
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Author Notes:T. Aref, A. Averin, S. van Dijken, A. Ferring, M. Koberidze, V.F. Maisi, H.Q. Nguyend, R.M. Nieminen, J.P. Pekola, and L.D. Yao

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520 |a We present two approaches for studying the uniformity of a tunnel barrier. The first approach is based on measuring single-electron and two-electron tunneling in a hybrid single-electron transistor. Our measurements indicate that the effective area of a conduction channel is about one order of magnitude larger than predicted by theoretical calculations. With the second method, transmission electron microscopy, we demonstrate that variations in the barrier thickness are a plausible explanation for the larger effective area and an enhancement of higher order tunneling processes. 
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