Design and characterization of the CLICTD pixelated monolithic sensor chip
A novel monolithic pixelated sensor and readout chip, the compact linear collider tracker detector (CLICTD) chip, is presented. The CLICTD chip was designed targeting the requirements of the silicon tracker development for the experiment at the compact linear collider (CLIC) and has been fabricated...
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| Hauptverfasser: | , , , , , , , , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
27 August 2020
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| In: |
IEEE transactions on nuclear science
Year: 2020, Jahrgang: 67, Heft: 10, Pages: 2263-2272 |
| ISSN: | 1558-1578 |
| DOI: | 10.1109/TNS.2020.3019887 |
| Online-Zugang: | Verlag, Volltext: https://doi.org/10.1109/TNS.2020.3019887 Verlag, Volltext: https://ieeexplore.ieee.org/document/9178777/authors#authors 
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| Verfasserangaben: | I. Kremastiotis, R. Ballabriga, M. Campbell, D. Dannheim, K. Dort, N. Egidos, J. Kröger, L. Linssen, X. Llopart, M. Munker, A. Nürnberg, I. Peric, S. Spannagel, T. Vanat, and M. Williams |
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| 245 | 1 | 0 | |a Design and characterization of the CLICTD pixelated monolithic sensor chip |c I. Kremastiotis, R. Ballabriga, M. Campbell, D. Dannheim, K. Dort, N. Egidos, J. Kröger, L. Linssen, X. Llopart, M. Munker, A. Nürnberg, I. Peric, S. Spannagel, T. Vanat, and M. Williams |
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| 520 | |a A novel monolithic pixelated sensor and readout chip, the compact linear collider tracker detector (CLICTD) chip, is presented. The CLICTD chip was designed targeting the requirements of the silicon tracker development for the experiment at the compact linear collider (CLIC) and has been fabricated in a modified 180 nm CMOS imaging process with charge collection on a high-resistivity p-type epitaxial layer. The chip features a matrix of 16 × 128 elongated channels, each measuring 300 × 30 μm2. Each channel contains 8 equidistant collection electrodes and analog readout circuits to ensure prompt signal formation. A simultaneous 8-bit time-of-arrival (with 10 ns time bins) and 5-bit time-over-threshold measurement is performed on the combined digital output of the 8 subpixels in every channel. The chip has been fabricated in two process variants and characterized in laboratory measurements using electrical test pulses and radiation sources. Results show a minimum threshold between 135 and 180 e and a noise of about 14 e- rms. The design aspects and characterization results of the CLICTD chip are presented. | ||
| 650 | 4 | |a analog readout circuits | |
| 650 | 4 | |a analogue-digital conversion | |
| 650 | 4 | |a Capacitance | |
| 650 | 4 | |a charge collection | |
| 650 | 4 | |a CLICTD chip | |
| 650 | 4 | |a CLICTD pixelated monolithic sensor chip | |
| 650 | 4 | |a CMOS | |
| 650 | 4 | |a CMOS image sensors | |
| 650 | 4 | |a CMOS integrated circuits | |
| 650 | 4 | |a compact linear collider tracker detector chip | |
| 650 | 4 | |a Detectors | |
| 650 | 4 | |a Electrodes | |
| 650 | 4 | |a elongated channels | |
| 650 | 4 | |a Epitaxial layers | |
| 650 | 4 | |a equidistant collection electrodes | |
| 650 | 4 | |a Monolithic CMOS sensors | |
| 650 | 4 | |a novel monolithic | |
| 650 | 4 | |a nuclear electronics | |
| 650 | 4 | |a p-type epitaxial layer | |
| 650 | 4 | |a position sensitive particle detectors | |
| 650 | 4 | |a readout chip | |
| 650 | 4 | |a readout electronics | |
| 650 | 4 | |a semiconductor counters | |
| 650 | 4 | |a Semiconductor device measurement | |
| 650 | 4 | |a silicon | |
| 650 | 4 | |a Silicon | |
| 650 | 4 | |a silicon pixel detectors | |
| 650 | 4 | |a silicon radiation detectors | |
| 650 | 4 | |a silicon tracker development | |
| 650 | 4 | |a Substrates | |
| 700 | 1 | |a Ballabriga, R. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Campbell, M. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Dannheim, D. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Dort, K. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Egidos, N. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Kröger, Jens |d 1991- |e VerfasserIn |0 (DE-588)1151577820 |0 (DE-627)1011919710 |0 (DE-576)497880776 |4 aut | |
| 700 | 1 | |a Linssen, L. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Llopart, X. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Munker, M. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Nürnberg, A. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Peric, I. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Spannagel, S. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Vanat, T. |e VerfasserIn |4 aut | |
| 700 | 1 | |a Williams, M. |e VerfasserIn |4 aut | |
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