Phenanthroline additives for enhanced semiconducting carbon nanotube dispersion stability and transistor performance
Dispersions of purely semiconducting single-walled carbon nanotubes (SWCNTs) have enabled solution-processed SWCNT networks as active layers in field-effect transistors (FETs) with high carrier mobilities and excellent on/off current ratios. Although reproducibility has improved in recent years, rea...
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| Hauptverfasser: | , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
December 9, 2020
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| In: |
ACS applied nano materials
Year: 2020, Jahrgang: 3, Heft: 12, Pages: 12314-12324 |
| ISSN: | 2574-0970 |
| DOI: | 10.1021/acsanm.0c02813 |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/acsanm.0c02813 Verlag, lizenzpflichtig, Volltext: https://pubs.acs.org/doi/10.1021/acsanm.0c02813 
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| Verfasserangaben: | Severin Schneider, Jacques Lefebvre, Nicolas J. Diercks, Felix J. Berger, François Lapointe, Juliette Schleicher, Patrick R. L. Malenfant, and Jana Zaumseil |
MARC
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| 520 | |a Dispersions of purely semiconducting single-walled carbon nanotubes (SWCNTs) have enabled solution-processed SWCNT networks as active layers in field-effect transistors (FETs) with high carrier mobilities and excellent on/off current ratios. Although reproducibility has improved in recent years, reaching the level that is required for commercial large-scale processing remains a challenge. A key issue is the tendency of SWCNTs to aggregate over time, resulting in network inhomogeneities that cause large device performance variations. Based on the tailored formulation of colloidal inks by the choice of solvent and use of additives, we demonstrate the strong stabilization effect of phenanthroline additives on polymer-sorted (6,5) SWCNT using time-dependent near-infrared absorption spectroscopy as a fast and simple assessment tool for the aggregation rate. The addition of the N-heteropolycycle 1,10-phenanthroline significantly extends the stability of dispersions of polymer-wrapped nanotubes in toluene and hence improves the morphology of spin-coated networks even after ink storage for several days. Bottom-contact, top-gate FETs based on such networks show much higher charge carrier mobilities and drastically reduced device-to-device variations compared to devices based on SWCNT dispersions without phenanthroline. Nanotube ink formulations with small-molecule additives are an important step toward reproducible device parameters and are crucial for the translation of nanotube FETs from the laboratory to commercial applications. | ||
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