Evaporation and condensation of SiO and SiO2 studied by infrared spectroscopy
Physical evaporation of SiO and SiO2 under ultra-high vacuum conditions was monitored in situ with infrared spectroscopy at frequencies between 450 cm−1 and 5000 cm−1. The measured vibrational spectra of the condensed films are identical in both cases, for SiO and SiO2 evaporation, and can be descri...
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| Main Authors: | , , , |
|---|---|
| Format: | Article (Journal) |
| Language: | English |
| Published: |
March 1, 2010
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| In: |
Applied spectroscopy
Year: 2010, Volume: 64, Issue: 3, Pages: 298-303 |
| ISSN: | 1943-3530 |
| DOI: | 10.1366/000370210790918346 |
| Online Access: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1366/000370210790918346 |
| Author Notes: | M. Klevenz, S. Wetzel, M. Möller, and A. Pucci |
MARC
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| 245 | 1 | 0 | |a Evaporation and condensation of SiO and SiO2 studied by infrared spectroscopy |c M. Klevenz, S. Wetzel, M. Möller, and A. Pucci |
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| 520 | |a Physical evaporation of SiO and SiO2 under ultra-high vacuum conditions was monitored in situ with infrared spectroscopy at frequencies between 450 cm−1 and 5000 cm−1. The measured vibrational spectra of the condensed films are identical in both cases, for SiO and SiO2 evaporation, and can be described with four Brendel oscillators located at 380 cm−1, 713 cm−1, 982 cm−1, and 1101 cm−1, corresponding to typical vibration modes in SiO. | ||
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