APA (7th ed.) Citation

Auzelle, T., Ullrich, F., Hietzschold, S., Sinito, C., Brackmann, S., Kowalsky, W., . . . Fernández-Garrido, S. (2021). External control of GaN band bending using phosphonate self-assembled monolayers. ACS applied materials & interfaces, 13(3), . https://doi.org/10.1021/acsami.0c17519

Chicago Style (17th ed.) Citation

Auzelle, Thomas, et al. "External Control of GaN Band Bending Using Phosphonate Self-assembled Monolayers." ACS Applied Materials & Interfaces 13, no. 3 (2021). https://doi.org/10.1021/acsami.0c17519.

MLA (9th ed.) Citation

Auzelle, Thomas, et al. "External Control of GaN Band Bending Using Phosphonate Self-assembled Monolayers." ACS Applied Materials & Interfaces, vol. 13, no. 3, 2021, https://doi.org/10.1021/acsami.0c17519.