Liang, Y., Kumaran, S., Zharnikov, M., & Tai, Y. (2021). Reduction of leakage current in amorphous oxide-semiconductor top-gated thin film transistors by interface engineering with dipolar self-assembled monolayers. Applied surface science, 569, . https://doi.org/10.1016/j.apsusc.2021.151029
Chicago-Zitierstil (17. Ausg.)Liang, Ya-Hsiang, Saravanan Kumaran, Michael Zharnikov, und Yian Tai. "Reduction of Leakage Current in Amorphous Oxide-semiconductor Top-gated Thin Film Transistors by Interface Engineering with Dipolar Self-assembled Monolayers." Applied Surface Science 569 (2021). https://doi.org/10.1016/j.apsusc.2021.151029.
MLA-Zitierstil (9. Ausg.)Liang, Ya-Hsiang, et al. "Reduction of Leakage Current in Amorphous Oxide-semiconductor Top-gated Thin Film Transistors by Interface Engineering with Dipolar Self-assembled Monolayers." Applied Surface Science, vol. 569, 2021, https://doi.org/10.1016/j.apsusc.2021.151029.