Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide
Nitrogen in group-IV semiconductors has become a well-established element of qubits capable of room-temperature operation. In silicon carbide, nitrogen can occupy different nonequivalent lattice sites, giving rise to different shallow donor states. We report a triplet fine structure in electronic tr...
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| Main Authors: | , , , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
27 December 2021
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| In: |
Applied physics letters
Year: 2021, Volume: 119, Issue: 26 |
| ISSN: | 1077-3118 |
| DOI: | 10.1063/5.0074046 |
| Online Access: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1063/5.0074046 Verlag, lizenzpflichtig, Volltext: https://aip.scitation.org/doi/abs/10.1063/5.0074046 
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| Author Notes: | N. Assmann, C. Persson, A.Yu. Kuznetsov, and E.V. Monakhov |
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| 520 | |a Nitrogen in group-IV semiconductors has become a well-established element of qubits capable of room-temperature operation. In silicon carbide, nitrogen can occupy different nonequivalent lattice sites, giving rise to different shallow donor states. We report a triplet fine structure in electronic transitions of nitrogen donors on the quasi-cubic carbon site in 4H silicon carbide with activation enthalpies of around 100 meV. The intensities of triplet components have a prominent dependence on the voltage bias. The activation enthalpies of the transitions exhibit the Poole-Frenkel effect, while no bias dependence is observed for the magnitude of splitting. A tentative explanation of the fine structure involves local symmetry changes due to stacking faults. | ||
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