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Single crystal growth of Eu2CuSi3 intermetallic compound by the floating-zone method

Large single crystals of the Eu2CuSi3 intermetallic compound have been successfully grown by a vertical floating-zone method with optical heating. Differential thermal analysis reveals that Eu2CuSi3 melts congruently at 1422°C. The single crystals grown at velocities of 3-5mm/h show a preferred grow...

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Main Authors: Cao, Chongde (Author) , Löser, Wolfgang (Author) , Behr, Günter (Author) , Klingeler, Rüdiger (Author) , Leps, Norman (Author) , Vinzelberg, Hartmut (Author) , Büchner, Bernd (Author)
Format: Article (Journal)
Language:English
Published: 2011
In: Journal of crystal growth
Year: 2011, Volume: 318, Issue: 1, Pages: 1009-1012
DOI:10.1016/j.jcrysgro.2010.10.224
Online Access:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1016/j.jcrysgro.2010.10.224
Verlag, lizenzpflichtig, Volltext: https://www.sciencedirect.com/science/article/pii/S002202481001170X
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Author Notes:Chongde Cao, Wolfgang Löser, Günter Behr, Rüdiger Klingeler, Norman Leps, Hartmut Vinzelberg, Bernd Büchner

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520 |a Large single crystals of the Eu2CuSi3 intermetallic compound have been successfully grown by a vertical floating-zone method with optical heating. Differential thermal analysis reveals that Eu2CuSi3 melts congruently at 1422°C. The single crystals grown at velocities of 3-5mm/h show a preferred growth direction close to crystallographic [100] orientation with inclination angles of about 16-20°. The suppression of evaporation of volatile elements and the control of the floating-zone temperature play a main role in the stability of the growth process. The crystals are Cu-depleted with respect to the nominal Eu2CuSi3 stoichiometry. Both magnetic susceptibility and electrical resistivity measured on oriented single crystalline Eu2CuSi3 samples reveal significant anisotropy with an easy magnetic c-axis and ferromagnetic ordering at TC=34K. 
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