Preparation, IR spectroscopy, and time-of-flight mass spectrometry of halogenated and methylated Si(111)
The preparation of chlorine-, bromine-, and iodine-terminated silicon surfaces (Si(111):Cl, Br, and I) using atomically flat Si(111)-(1×1):H is described. The halogenated surfaces were obtained by photochemically induced radical substitution reactions with the corresponding dihalogen in a Schlenk tu...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article (Journal) |
| Language: | English |
| Published: |
08 June 2011
|
| In: |
Applied physics. A, Materials science & processing
Year: 2011, Volume: 104, Issue: 3, Pages: 987-991 |
| ISSN: | 1432-0630 |
| DOI: | 10.1007/s00339-011-6483-0 |
| Online Access: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1007/s00339-011-6483-0
|
| Author Notes: | Nils Salingue, Peter Hess |
| Summary: | The preparation of chlorine-, bromine-, and iodine-terminated silicon surfaces (Si(111):Cl, Br, and I) using atomically flat Si(111)-(1×1):H is described. The halogenated surfaces were obtained by photochemically induced radical substitution reactions with the corresponding dihalogen in a Schlenk tube by conventional inert gas chemistry. The nucleophilic substitution of the Si-Cl functionality with the Grignard reagent (CH3MgCl) resulted in the unreconstructed methylated Si(111)-(1×1):CH3 surface. The halogenated and methylated silicon surfaces were characterized by Fourier transform infrared (FTIR) spectroscopy and laser-induced desorption of monolayers (LIDOM). Calibration of the desorption temperature via analysis of time-of-flight (TOF) distributions as a function of laser fluence allowed the determination of the originally emitted neutral fragments by TOF mass spectrometry using electron-impact ionization. The halogens were desorbed atomically and as SiXn(X = Cl, Br) clusters. The methyl groups mainly desorbed as methyl and ethyl fragments and a small amount of +SiCH3. |
|---|---|
| Item Description: | Gesehen am 04.10.2022 |
| Physical Description: | Online Resource |
| ISSN: | 1432-0630 |
| DOI: | 10.1007/s00339-011-6483-0 |