The first beam test of a monolithic particle pixel detector in high-voltage CMOS technology
The results of beam- and irradiation tests preformed on a monolithic particle pixel detector in high-voltage CMOS technology will be presented for the first time. All tested detectors are implemented in a 0.35μm technology, they utilize high-voltage n-well/p-substrate diodes as pixel sensors and rel...
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| Main Authors: | , , , , |
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| Format: | Article (Journal) |
| Language: | English |
| Published: |
2011
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| In: |
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment
Year: 2011, Volume: 628, Issue: 1, Pages: 287-291 |
| ISSN: | 1872-9576 |
| DOI: | 10.1016/j.nima.2010.06.337 |
| Online Access: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1016/j.nima.2010.06.337 Verlag, lizenzpflichtig, Volltext: https://www.sciencedirect.com/science/article/pii/S0168900210015275 
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| Author Notes: | I. Perić, C. Takacs, J. Behr, F.M. Wagner, P. Fischer |
MARC
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| 520 | |a The results of beam- and irradiation tests preformed on a monolithic particle pixel detector in high-voltage CMOS technology will be presented for the first time. All tested detectors are implemented in a 0.35μm technology, they utilize high-voltage n-well/p-substrate diodes as pixel sensors and rely on charge drift in diode depletion layers as the main signal generating mechanism. The detector prototype tested in the beam is a system on a chip that contains a 128×128 matrix with 21×21μm2 large pixels, source-follower based- rolling shutter readout and on-chip ADCs that digitize the signal amplitudes with 8-bit precision. Test beam measurements have been performed using EUDET infrastructure. The measured MIP cluster signals are typically 2200e, spatial resolution approximately 7μm (RMS), signal-to-noise ratio of a single pixel is 12.3 and detection efficiency more than 85%. To test the radiation tolerance, several detector chips have been irradiated with neutrons up to 1014neq/cm2 and with X-rays up to 500kGy (50Mrad), they are still functional and the experimental results obtained with these chips will be presented as well. | ||
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