Revealing molecular orbital gating by transition voltage spectroscopy
Recently, Song et al. [Nature 462, 1039 (2009)] employed transition voltage spectroscopy to demonstrate that the energy εH of the highest occupied molecular orbital (HOMO) of single-molecule transistors can be controlled by a gate potential VG. To demonstrate the linear dependence εH−VG, the experim...
Gespeichert in:
| 1. Verfasser: | |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
11 August 2010
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| In: |
Chemical physics
Year: 2010, Jahrgang: 377, Heft: 1, Pages: 15-20 |
| DOI: | 10.1016/j.chemphys.2010.08.009 |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1016/j.chemphys.2010.08.009 Verlag, lizenzpflichtig, Volltext: https://www.sciencedirect.com/science/article/pii/S0301010410003794 
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| Verfasserangaben: | Ioan Bâldea |
MARC
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| 520 | |a Recently, Song et al. [Nature 462, 1039 (2009)] employed transition voltage spectroscopy to demonstrate that the energy εH of the highest occupied molecular orbital (HOMO) of single-molecule transistors can be controlled by a gate potential VG. To demonstrate the linear dependence εH−VG, the experimental data have been interpreted by modeling the molecule as an energy barrier spanning the spatial source-drain region of molecular junctions. Since, as shown in this work, that crude model cannot quantitatively describe the measured I-V-characteristics, it is important to get further support for the linear dependence of εH on VG. The results presented here, which have been obtained within a model of a point-like molecule, confirm this linear dependence. Because the two models rely upon complementary descriptions, the present results indicate that the interpretation of the experimental results as evidence for a gate controlled HOMO is sufficiently general. | ||
| 650 | 4 | |a Fowler-Nordheim transition | |
| 650 | 4 | |a Molecular electronics | |
| 650 | 4 | |a Molecular orbital gating | |
| 650 | 4 | |a Quantum transport | |
| 650 | 4 | |a Single-molecule transistors | |
| 650 | 4 | |a Transition voltage spectroscopy | |
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