Low-temperature growth of silicon nanotubes and nanowires on amorphous substrates
Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si s...
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| Hauptverfasser: | , , , , , , , |
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| Dokumenttyp: | Article (Journal) |
| Sprache: | Englisch |
| Veröffentlicht: |
10 March 2010
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| In: |
ACS nano
Year: 2010, Jahrgang: 4, Heft: 4, Pages: 1805-1812 |
| ISSN: | 1936-086X |
| DOI: | 10.1021/nn900969y |
| Online-Zugang: | Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/nn900969y
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| Verfasserangaben: | Beri N. Mbenkum, Andreas S. Schneider, Gisela Schütz, C. Xu, Gunther Richter, Peter A. van Aken, Günter Majer, and Joachim P. Spatz |
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| 520 | |a Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si substrates. Using hydrogen instead of oxygen plasma during NP preparation enhances the catalytic activity of AuNPs (diameters of 10−20 nm), enabling Si 1D growth at temperatures as low as 320 °C. On BSG, Si nanowires (SiNWs) are identified and reasonable vertical alignment is achieved at 420 °C. On SiOx/Si, only Si nanotubes (SiNTs) are obtained right up to 420 °C. A mixture of SiNTs and SiNWs is observed at 450 °C and only SiNWs grow at 480 °C. | ||
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