Impact of connectivity on the electronic structure of N-heterotriangulenes

N-heterotriangulenes (N-HTAs) are promising organic semiconductors for applications in field effect transistors and solar cells. Thereby the electronic structure of organic/metal interfaces and thin films is essential for the performance of organic-molecule-based devices. Here, we studied the struct...

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Hauptverfasser: Ajdari, Mohsen (VerfasserIn) , Pappenberger, Ronja (VerfasserIn) , Walla, Christian (VerfasserIn) , Hoffmann, Marvin (VerfasserIn) , Michalsky, Ina (VerfasserIn) , Kivala, Milan (VerfasserIn) , Dreuw, Andreas (VerfasserIn) , Tegeder, Petra (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: January 12, 2023
In: The journal of physical chemistry. C, Energy, materials, and catalysis
Year: 2023, Jahrgang: 127, Heft: 1, Pages: 542-549
ISSN:1932-7455
DOI:10.1021/acs.jpcc.2c05737
Online-Zugang:Verlag, lizenzpflichtig, Volltext: https://doi.org/10.1021/acs.jpcc.2c05737
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Verfasserangaben:Mohsen Ajdari, Ronja Pappenberger, Christian Walla, Marvin Hoffmann, Ina Michalsky, Milan Kivala, Andreas Dreuw, and Petra Tegeder

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520 |a N-heterotriangulenes (N-HTAs) are promising organic semiconductors for applications in field effect transistors and solar cells. Thereby the electronic structure of organic/metal interfaces and thin films is essential for the performance of organic-molecule-based devices. Here, we studied the structural and the electronic properties of two different N-HTAs, N-HTA 550 and N-HTA 557, the latter containing an additional 7-membered ring, adsorbed on Au(111) using vibrational and electronic high-resolution electron energy loss spectroscopy in combination with state-of-the-art quantum chemical calculations. In the mono- and multilayer, both N-HTAs adopt a planar adsorption geometry with the molecular backbone oriented parallel to the gold substrate. The energies of the lowest excited electronic singlet states (S) are assigned. The optical gap (S0 → S1 transition) is found to be 3.4 eV for N-HTA 550 and 2.5 eV for N-HTA 557. Thus, the introduction of the −C═C- double bond in N-HTA 557 resulted in a pronounced decrease of the optical gap size by 0.9 eV due to the larger π-conjugated electron system compared to N-HTA 550. Structural variations or substitution patterns in N-HTAs foster the opportunity for tailoring their electronic properties. 
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