Qin, S., Zhang, G., Zhang, J., Zhao, Y., Song, C., Emonds, Y., & Fröning, H. (2024). Random telegraph noise characteristic of nonvolatile resistive random access memories based on optical interference principle. Japanese journal of applied physics, 63(3), . https://doi.org/10.35848/1347-4065/ad26d1
Chicago Style (17th ed.) CitationQin, Sichen, Guiquan Zhang, Jia-Wei Zhang, Yu Zhao, Chen Song, Yannick Emonds, and Holger Fröning. "Random Telegraph Noise Characteristic of Nonvolatile Resistive Random Access Memories Based on Optical Interference Principle." Japanese Journal of Applied Physics 63, no. 3 (2024). https://doi.org/10.35848/1347-4065/ad26d1.
MLA (9th ed.) CitationQin, Sichen, et al. "Random Telegraph Noise Characteristic of Nonvolatile Resistive Random Access Memories Based on Optical Interference Principle." Japanese Journal of Applied Physics, vol. 63, no. 3, 2024, https://doi.org/10.35848/1347-4065/ad26d1.