Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers

The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this pape...

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Hauptverfasser: Kieseler, Jan (VerfasserIn) , Almeida, Pedro Gonçalo Dias de (VerfasserIn) , Kałuzińska, Oliwia Agnieszka (VerfasserIn) , Mühlnikel, Marie Christin (VerfasserIn) , Diehl, Leena (VerfasserIn) , Sicking, Eva (VerfasserIn) , Zehetner, Philipp (VerfasserIn)
Dokumenttyp: Article (Journal)
Sprache:Englisch
Veröffentlicht: 6 September 2023
In: Journal of Instrumentation
Year: 2023, Jahrgang: 18, Heft: 09, Pages: 1-20
ISSN:1748-0221
DOI:10.1088/1748-0221/18/09/P09010
Online-Zugang:Verlag, kostenfrei, Volltext: https://doi.org/10.1088/1748-0221/18/09/P09010
Verlag, kostenfrei, Volltext: https://dx.doi.org/10.1088/1748-0221/18/09/P09010
Volltext
Verfasserangaben:Jan Kieseler, Pedro Gonçalo Dias de Almeida, Oliwia Agnieszka Kałuzińska, Marie Christin Mühlnikel, Leena Diehl, Eva Sicking and Philipp Zehetner

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LEADER 00000caa a2200000 c 4500
001 1897333617
003 DE-627
005 20241205155724.0
007 cr uuu---uuuuu
008 240801s2023 xx |||||o 00| ||eng c
024 7 |a 10.1088/1748-0221/18/09/P09010  |2 doi 
035 |a (DE-627)1897333617 
035 |a (DE-599)KXP1897333617 
035 |a (OCoLC)1475305454 
040 |a DE-627  |b ger  |c DE-627  |e rda 
041 |a eng 
084 |a 29  |2 sdnb 
100 1 |a Kieseler, Jan  |e VerfasserIn  |0 (DE-588)1206566760  |0 (DE-627)1692653911  |4 aut 
245 1 0 |a Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers  |c Jan Kieseler, Pedro Gonçalo Dias de Almeida, Oliwia Agnieszka Kałuzińska, Marie Christin Mühlnikel, Leena Diehl, Eva Sicking and Philipp Zehetner 
246 3 3 |a Isothermal annealing of radiation defects in silicon bulk material of diodes from eight” silicon wafers 
264 1 |c 6 September 2023 
300 |b Illustrationen 
300 |a 20 
336 |a Text  |b txt  |2 rdacontent 
337 |a Computermedien  |b c  |2 rdamedia 
338 |a Online-Ressource  |b cr  |2 rdacarrier 
500 |a Gesehen am 01.08.2024 
520 |a The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8” silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from 6.5· 1014 to 1 · 1016 neq/cm2. 
700 1 |a Almeida, Pedro Gonçalo Dias de  |e VerfasserIn  |4 aut 
700 1 |a Kałuzińska, Oliwia Agnieszka  |e VerfasserIn  |4 aut 
700 1 |a Mühlnikel, Marie Christin  |e VerfasserIn  |0 (DE-588)1337582697  |0 (DE-627)1897334451  |4 aut 
700 1 |a Diehl, Leena  |e VerfasserIn  |4 aut 
700 1 |a Sicking, Eva  |e VerfasserIn  |4 aut 
700 1 |a Zehetner, Philipp  |e VerfasserIn  |4 aut 
773 0 8 |i Enthalten in  |t Journal of Instrumentation  |d London : Inst. of Physics, 2006  |g 18(2023), 09, Artikel-ID P09010, Seite 1-20  |h Online-Ressource  |w (DE-627)512298181  |w (DE-600)2235672-1  |w (DE-576)256442541  |x 1748-0221  |7 nnas  |a Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers 
773 1 8 |g volume:18  |g year:2023  |g number:09  |g elocationid:P09010  |g pages:1-20  |g extent:20  |a Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers 
856 4 0 |u https://doi.org/10.1088/1748-0221/18/09/P09010  |x Verlag  |x Resolving-System  |z kostenfrei  |3 Volltext 
856 4 0 |u https://dx.doi.org/10.1088/1748-0221/18/09/P09010  |x Verlag  |z kostenfrei  |3 Volltext 
951 |a AR 
992 |a 20240801 
993 |a Article 
994 |a 2023 
998 |g 1337582697  |a Mühlnikel, Marie Christin  |m 1337582697:Mühlnikel, Marie Christin  |p 4 
999 |a KXP-PPN1897333617  |e 4561503277 
BIB |a Y 
SER |a journal 
JSO |a {"physDesc":[{"noteIll":"Illustrationen","extent":"20 S."}],"relHost":[{"physDesc":[{"extent":"Online-Ressource"}],"name":{"displayForm":["Institute of Physics Publishing"]},"origin":[{"dateIssuedDisp":"2006-","publisher":"Inst. of Physics","dateIssuedKey":"2006","publisherPlace":"London"}],"id":{"zdb":["2235672-1"],"eki":["512298181"],"issn":["1748-0221"]},"type":{"media":"Online-Ressource","bibl":"periodical"},"disp":"Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafersJournal of Instrumentation","note":["Gesehen am 02.11.2020"],"recId":"512298181","language":["eng"],"pubHistory":["1.2006 -"],"part":{"year":"2023","pages":"1-20","issue":"09","text":"18(2023), 09, Artikel-ID P09010, Seite 1-20","volume":"18","extent":"20"},"title":[{"title":"Journal of Instrumentation","title_sort":"Journal of Instrumentation"}]}],"origin":[{"dateIssuedKey":"2023","dateIssuedDisp":"6 September 2023"}],"id":{"doi":["10.1088/1748-0221/18/09/P09010"],"eki":["1897333617"]},"name":{"displayForm":["Jan Kieseler, Pedro Gonçalo Dias de Almeida, Oliwia Agnieszka Kałuzińska, Marie Christin Mühlnikel, Leena Diehl, Eva Sicking and Philipp Zehetner"]},"titleAlt":[{"title":"Isothermal annealing of radiation defects in silicon bulk material of diodes from eight” silicon wafers"}],"type":{"bibl":"article-journal","media":"Online-Ressource"},"note":["Gesehen am 01.08.2024"],"recId":"1897333617","language":["eng"],"title":[{"title":"Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers","title_sort":"Isothermal annealing of radiation defects in silicon bulk material of diodes from 8” silicon wafers"}],"person":[{"display":"Kieseler, Jan","roleDisplay":"VerfasserIn","role":"aut","family":"Kieseler","given":"Jan"},{"roleDisplay":"VerfasserIn","display":"Almeida, Pedro Gonçalo Dias de","role":"aut","family":"Almeida","given":"Pedro Gonçalo Dias de"},{"family":"Kałuzińska","given":"Oliwia Agnieszka","display":"Kałuzińska, Oliwia Agnieszka","roleDisplay":"VerfasserIn","role":"aut"},{"role":"aut","display":"Mühlnikel, Marie Christin","roleDisplay":"VerfasserIn","given":"Marie Christin","family":"Mühlnikel"},{"role":"aut","roleDisplay":"VerfasserIn","display":"Diehl, Leena","given":"Leena","family":"Diehl"},{"family":"Sicking","given":"Eva","display":"Sicking, Eva","roleDisplay":"VerfasserIn","role":"aut"},{"given":"Philipp","family":"Zehetner","role":"aut","display":"Zehetner, Philipp","roleDisplay":"VerfasserIn"}]} 
SRT |a KIESELERJAISOTHERMAL6202